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Layout Pattern Matching for DRC, DFM, and Yield Improvement

Layout Pattern Matching for DRC, DFM, and Yield Improvement
by Tom Dillinger on 06-01-2016 at 12:00 pm

It is truly amazing to consider the advances in microelectronic process development, using 193i photolithography. The figure below is a stark reminder of the difference between the illuminating wavelength and the final imaged geometries. This technology evolution has been enabled by continued investment in mask data generation… Read More


Samsung Could Have A Winner With The Gear 360 VR Camera

Samsung Could Have A Winner With The Gear 360 VR Camera
by Patrick Moorhead on 05-09-2016 at 12:00 pm

For success, VR playback and content must be robust
The world of VR is split into two different areas, tethered PC VR and mobile VR. The reason why so many companies are going after mobile VR is because that’s where all of the volume is expected to be in VR. As a result, you have companies like Samsung Electronics and LG Electronics introducing… Read More


Why is NXP Moving to FD-SOI?

Why is NXP Moving to FD-SOI?
by Ron Martino on 05-08-2016 at 11:00 am

The latest generations of power efficient and full-featured applications processors in NXP’s very successful and broadly deployed i.MX platform are being manufactured on 28nm FD-SOI. The new i.MX 7 series leverages the 32-bit ARM v7-A core, targeting the general embedded, e-reader, medical, wearable and IoT markets, where… Read More


3D NAND – Moore’s Law in the third dimension

3D NAND – Moore’s Law in the third dimension
by Scotten Jones on 05-07-2016 at 4:00 am

For more than a decade 2D NAND has been the leading driver of lithography shrinks, for example, Samsung went from 120nm in 2003 to 16nm in 2014 with shrinks on an almost yearly basis, but the shrinks came at a price. At 16nm Self Aligned Quadruple Pattering (SAQP) was required for the most critical layers and patterning related costs… Read More


Samsung 10nm and 7nm Strategy Explained!

Samsung 10nm and 7nm Strategy Explained!
by Daniel Nenni on 04-23-2016 at 7:00 am

Samsung Foundry had an intimate gathering recently for 200 customers and partners that I missed, but I know several people who attended. This event was a precursor to #53DAC where Samsung has the largest foundry presence. I was able to clarify what I had heard via a phone call with Kelvin Low so here is my version of what is important:… Read More


ARM and FD-SOI are like Peanut Butter and Jelly!

ARM and FD-SOI are like Peanut Butter and Jelly!
by Daniel Nenni on 04-19-2016 at 4:00 pm

When I first heard about a foundry possibly licensing FD-SOI I would have bet it was SMIC in China. What better market for a low cost, low power, easy to manufacture alternative to FinFETs? The foundry of course was Samsung which also made complete sense since they have 28nm gate-first capacity that matches up nicely to 28nm FD-SOI.… Read More


EUV is coming but will we need it?

EUV is coming but will we need it?
by Scotten Jones on 04-12-2016 at 4:00 pm

I have written multiple articles about this year’s SPIE Advanced Lithography Conference describing all of the progress EUV has made in the last year. Source power is improving, photoresists are getting faster, prototype pellicles are in testing, multiple sites around the world are exposing wafers by the thousands and more. Read More


In the Valley & thinking about FD-SOI for your next chip design? Epic (and free) symposium 13 April

In the Valley & thinking about FD-SOI for your next chip design? Epic (and free) symposium 13 April
by Adele Hars on 04-02-2016 at 7:00 am

If you’re in the chip biz in Silicon Valley, check out the SOI Consortium FD-SOI Symposium on April 13th in San Jose. They’ve been running these things since 2009, and I have to say that this one is the most comprehensive to date. Headliners include Cisco, Sony, NXP, SigmaDesigns, ARM, Ciena plus the big FD-SOI foundries,… Read More


10nm SRAM Projections – Who will lead

10nm SRAM Projections – Who will lead
by Scotten Jones on 03-25-2016 at 12:00 pm

At ISSCC this year Samsung published a paper entitled “A 10nm FinFET 128Mb SRAM with Assist Adjustment System for Power, Performance, and Area Optimization. In the paper Samsung disclosed a high density 6T SRAM cell size of 0.040µm[SUP]2[/SUP]. I thought it would be interesting to take a look at how this cell size stacks … Read More


Positive pointers from Samsung, GF, Renesas, NXP/Freescale, ST, Soitec – so will 2016 be the year of FD-SOI?

Positive pointers from Samsung, GF, Renesas, NXP/Freescale, ST, Soitec – so will 2016 be the year of FD-SOI?
by Adele Hars on 02-10-2016 at 4:00 pm

A little over a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. Quite a bit of it came out of the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on the SOI Consortium website (click here to see what’s there) – but keep checking… Read More