At IEDM 2023, Naoto Horiguchi presented on CFETs and Middle of Line integration. I had a chance to speak with Naoto about this work and this write up is based on his presentation at IEDM and our follow up discussion. I always enjoy talking to Naoto, he is one of the leaders in logic technology development, explains the technology in … Read More
Tag: cfet
IEDM: TSMC Ongoing Research on a CFET Process
I attended the recent International Electron Devices Meeting (IEDM) last week. Many of the sessions are too technical and too far away from high volume manufacture to make good topics for a blog post. As a Fellow from IBM said about 5nm at and earlier IEDM, “none of these ideas will impact 5nm. It takes ten years for a solution to from… Read More
IEDM 2022 – Ann Kelleher of Intel – Plenary Talk
Ann Kelleher is Intel’s Executive Vice President, General Manager, Technology Development, and she gave the first plenary talk to kick off the 2022 IEDM, “Celebrating 75 Years of the Transistor A Look at the Evolution of Moore’s Law Innovation”. I am generally not a fan of plenary talks because I think they are often too broad and… Read More
SEMICON West 2022 and the Imec Roadmap
SEMICON West 2022 was held from July 12th to 14th at the Moscone Center in San Francisco.
On Monday the 11th before the show, Imec held a technology forum at the Marriott Marquee right around the corner from the Moscone center. In recent years the Imec forums have shifted away from the process technology I cover to more of a system and… Read More
Future Semiconductor Technology Innovations
At the recent VLSI Symposium on Technology and Circuits, Dr. Y.J. Mii, Senior Vice President of Research and Development at TSMC, gave a plenary talk entitled, “Semiconductor Innovations, from Device to System”. The presentation offered insights into TSMC’s future R&D initiatives, beyond the current roadmap. The associated… Read More
3D Device Technology Development
The VLSI Symposium on Technology and Circuits provides a deep dive on recent technical advances, as well as a view into the research efforts that will be transitioning to production in the near future. In a short course presentation at the Symposium, Marko Radosavljevic, from the Components Research group at Intel, provided … Read More
Intel Discusses Scaling Innovations at IEDM
Standard Cell Scaling
Complex logic designs are built up from standard cells, in order to continue to scale logic we need to continually shrink the size of standard cells.
Figure 1 illustrates the dimensions of a standard cell.
Figure 1. Standard Cell Dimensions.
From figure 1 we can see that shrinking standard cell sizes requires… Read More
SISPAD – Cost Simulations to Enable PPAC Aware Technology Development
I was invited to give a plenary address at the SISPAD conference in September 2021. For anyone not familiar with SISPAD it is a premiere TCAD conference. This year for the first time SISPAD wanted to address cost and my talk was “Cost Simulations to Enable PPAC Aware Technology Development”.
For many years the standard in technology… Read More
VLSI Symposium – TSMC and Imec on Advanced Process and Devices Technology Toward 2nm
At the 2021 Symposium on VLSI Technology and Circuits in June a short course was held on “Advanced Process and Devices Technology Toward 2nm-CMOS and Emerging Memory”. In this article I will review the first two presentations covering leading edge logic devices. The two presentations are complementary and provide and excellent… Read More
What Might the “1nm Node” Look Like?
The device roadmap for the next few advanced process nodes seems relatively clear. The FinFET topology will subsequently be displaced by a “gate-all-around” device, typically using multiple stacked channels with a metal gate completely surrounding the “nanosheets”. Whereas the fin demonstrates improved gate-to-channel… Read More