Current 1a-DRAM and 5/4nm foundry nodes have minimum pitches in the 28 nm pitch range. The actual 28 nm pitch patterns are one-dimensional active area fins (for both DRAM and foundry) as well as one-dimensional lower metal lines (in the case of foundry). One can imagine that, for a two-dimensional routing pattern, both horizontal… Read More
The SPIE Advanced Lithography Conference is the semiconductor industries premier conference on lithography. The 2023 conference was held the week of February 27th and at the conference Applied Materials announced their Sculpta® pattern shaping tool. Last week I had an opportunity to interview Steven Sherman the Managing … Read More
The many idiosyncrasies of EUV lithography affect the resolution that can actually be realized. One which still does not get as much attention as it should is the cross-slit pupil rotation [1-3]. This is a fundamental consequence of using rotational symmetry in ring-field optical systems to control aberrations in reflective… Read More
Stochastic defects in EUV lithography have been studied over the last few years. For years, the Poisson noise from the low photon density of EUV had been suspected [1,2]. EUV distinguishes itself from DUV lithography with secondary electrons functioning as intermediary agents in generating reactions in the resist. Therefore,… Read More
It has recently been revealed that the N5 node from TSMC has a minimum gate pitch of 51 nm [1,2] with a channel length as small as 6 nm . Such a tight channel length entails tight CD control in the patterning process, well under 0.5 nm. What are the possible lithography scenarios?
Blur Limitations for EUV Exposure