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WP_Term Object
(
[term_id] => 89
[name] => FinFET
[slug] => finfet
[term_group] => 0
[term_taxonomy_id] => 89
[taxonomy] => category
[description] =>
[parent] => 0
[count] => 223
[filter] => raw
[cat_ID] => 89
[category_count] => 223
[category_description] =>
[cat_name] => FinFET
[category_nicename] => finfet
[category_parent] => 0
[is_post] =>
)
The common theme amongst semiconductor ecosystem conferences this year is FinFETS, probably the most exciting technology we will see this decade. A lot has been written on SemiWiki about FinFETS, it is one of the top trending search terms, but there is some confusion about the process naming so let me attempt to explain.
In planar… Read More
The previous post in this series provided an overview of FinFET devices. This article will briefly cover FinFET fabrication.
The major process steps in fabricating silicon fins are shown in Figures 1 through 3. The step that defines the fin thickness uses Sidewall Image Transfer (SIT). Low-pressure chemical vapor (isotropic)… Read More
This is the first of a multi-part series, to introduce FinFET technology to SemiWiki readers. These articles will highlight the technology’s key characteristics, and describe some of the advantages, disadvantages, and challenges associated with this transition. Topics in this series will include FinFET fabrication,… Read More
TSMC Unveils the World’s Most Advanced Logic Technology at IEDM