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Recent Industry Wikis
Samsung X-Cube™ is a 3D IC packaging technology developed by Samsung Electronics that enables vertical stacking of multiple active logic dies using through-silicon vias (TSVs) and micro-bump bonding. As part of Samsung’s Advanced Package (AVP) portfolio—which also includes I-Cube™ (2.5D interposer-based packaging) and… Read More
Foveros is a 3D chip stacking technology developed by Intel that enables high-density vertical integration of multiple active logic dies using face-to-face (F2F) hybrid bonding and through-silicon vias (TSVs). First unveiled in December 2018, Foveros allows for heterogeneous integration of compute, graphics, AI, and IO… Read More
EMIB (Embedded Multi-die Interconnect Bridge) is an advanced 2.5D packaging technology developed by Intel that enables high-density, high-bandwidth, low-latency interconnects between chiplets (dies) within a single package—without requiring a full silicon interposer. EMIB offers a modular and scalable approach to … Read More
CoWoS® (Chip-on-Wafer-on-Substrate) is a 2.5D advanced packaging technology developed by TSMC that allows multiple dies—including logic, memory, and analog ICs—to be integrated side-by-side on a high-density silicon interposer. CoWoS is a cornerstone of TSMC’s 3D Fabric™ platform and plays a critical role in enabling … Read More
TSMC 3D Fabric™ is a comprehensive suite of 3D silicon stacking and advanced packaging technologies developed by Taiwan Semiconductor Manufacturing Company (TSMC) to enable high-performance, power-efficient, and space-optimized system integration. It represents TSMC’s response to growing industry demand for heterogeneous… Read More
A System on Chip (SoC) is an integrated circuit (IC) that consolidates all—or most—components of a computer or electronic system onto a single chip. SoCs are foundational to modern electronics, powering everything from smartphones and tablets to automobiles, IoT devices, gaming consoles, and AI accelerators. They offer advantages… Read More
Intel 18A(P) (also referred to as Intel 18A+ or simply 18A Performance) is Intel’s upcoming advanced semiconductor process node, positioned as a refinement and performance enhancement of the base Intel 18A node. It marks a critical step in Intel’s roadmap to reclaim process leadership by the latter half of the 2020s, leveraging… Read More
Overview
Intel 7 is a 10nm-class semiconductor manufacturing node developed by Intel Corporation, first announced in July 2021 as part of the company’s updated process node naming scheme. Despite its name, Intel 7 is not a 7nm node by conventional industry standards, but rather an enhanced version of Intel’s previous 10nm SuperFin… Read More
Also Known As: TSMC 1.6 nm, Angstrom-class node
Node Class: Leading-edge logic (1.6 nm)
Transistor Type: Nanosheet GAAFET (Gate-All-Around Field-Effect Transistor)
Backside Power Variant: Integrates Super Power Rail (SPR) backside power delivery
Launch Schedule: Risk production in 2026, volume production in H2 2026–2027… Read More
Overview
Feature |
Intel 3 |
Intel 18A |
Node Class |
Enhanced 7nm (refinement of Intel 4) |
1.8nm-class full-node leap |
Transistor Type |
FinFET |
RibbonFET (GAAFET) |
Power Delivery |
Front-side power only |
Backside Power Delivery (PowerVia) |
EUV Use |
Partial (select layers) |
Extensive EUV, reduced multi-patterning |
PPA Target |
Modest vs. Intel |
…
Read More
cHBM for AI: Capabilities, Challenges, and Opportunities