An informal survey of RTDA customers reveals that larger companies tend to buy licenses based on peak usage while smaller companies do not have that luxury and have to settle for fewer licenses than they would ideally have and optimize the mix of licenses that they can afford given their budget. Larger companies get better prices… Read More
At Intel we used to hand-craft every single transistor size to eek out the ultimate in IC performance for DRAM and graphic chips. Today, there are many libraries that you can choose from for an SoC design in order to reach your power, speed and area trade-offs. I’m going to attend a Synopsys webinar on August 2nd to learn more … Read More
There’s a dirty secret problem about EUV that people don’t seem to to be talking about. There’s no pellicle on a EUV mask. OK, probably you have no idea what that means, a lot of jargon words, nor why it would be important, but it seems to me it could be the killer problem for EUV.
In refractive masks, you print a pattern… Read More
At Semicon, Ben Rathsack of Tokyo Electron America talked about directed self assembly (DSA) at the standing-room only lithography morning. So what is it? Self assembly involves taking two monomers that don’t mix and letting them polymerise (so like styrene forming polystyrene). Since they won’t mix they will … Read More
The press has been buzzing about 3D everything for the past few years, so when it comes to IC design it’s a fair question to ask how would you actually extract 3D IC structures for use by analysis tools like a circuit simulator. I read a white paper by Christen Decoin and Vassilis Kourkoulos of Mentor Graphics this week and became… Read More
This is really the second part to this blog about the challenges of EUV lithography. The next speaker was Franklin Kalk who is CTO of Toppan Photomasks. He too emphasized that we can make almost arbitrarily small features but more and more masks are required (not, that I suspect, he would complain being in the mask business). For EUV… Read More
Have you seen the latest design rule manuals? At 28nm and 20nm design sign-off is no longer just DRC and LVS. These basic components of physical verification are being augmented by an expansive set of yield analysis and critical feature identification capabilities, as well as layout enhancements, printability, and performance… Read More
Matt Elmore of ANSYS/Apache has an interesting blog posting about thermal analysis in 3D integrated circuits. With both technical and economic challenges at process nodes as we push below 28nm, increasingly product groups are looking towards through-silicon-via (TSV) based approaches as a way of keeping Moore’s law… Read More
Over the years many attempts have been made to increase the level of automation in analog design. Most of these have not been especially successful. Probably part of the reason was inadequate technology but also there is an attitude that “real” analog designers design polygons on the bare silicon. I think two things… Read More
EUV is the great hope for avoiding having to go to triple (and more) patterning if we have to stick with 193nm light. There were several presentations at Semicon about the status of EUV. Here I’ll discuss the issues with EUV lithography and in a separate post discuss the issues about making masks for EUV.
It is probably worth … Read More
