The 2nd International Workshop on Resistive RAM. The workshop was the second installment of an annual series organized by Stanford University and the Belgian research institute Imec. Like most RRAM workshops, this year’s event featured talks focusing on the physics of RRAM devices and their underlying switching mechanism(s).… Read More
Introducing the first ReRAM-Forum movie!! In part 2 of their recently published papers in the Transactions on Electron Devices of the IEEE, Professor Ielmini’s group describe the modeling of resistive switching in bipolar metal oxide ReRAM. Like part 1, the paper is collaboration with David Gilmer of Sematech who provided the… Read More
The recent (August) flash memory summit in Santa Clara had a session devoted to ReRAM as well as featuring prominently in the keynote address by Sung Wook Park of SK Hynix. The talk includes a summary of NAND’s well known scaling issues along with approaches to 3D NAND. It turns out that they are working on three different technologies:… Read More
Confused by the way a ReRAM cell behaves? Looking for a clear definition of the various terms used? Then check out Blogs at ReRAM-Forum.com. on recent publications appearing in the IEEE journals. The latest Blog discusses a paper published by Professor Daniele Ielmini of the Politecnico di Milano in Italy on the Resistive Switching… Read More
Time flies! IEDM time is coming up again (this year on the left coast) and the conference program is now on-line. Lots of interest to the ReRAM/CBRAM community. While some trends are emerging (Hafnium Oxide appears to be the material of choice) there are still plenty of other more contentious issues. ReRAM/CBRAM has reached the … Read More
Most companies in the memory business have ReRAM on their radar if not their roadmaps. Toshiba have made some bullish comments about the roadmap and chip size for ReRAM at a recent R&D Strategies Update. At face value, the schedule would put Toshiba quite a bit ahead of their competitors. Over at ReRAM-Forum.com, we have done… Read More
A Veritable who’s who of ReRAM researchers will be present at the 2nd International Workshop on Resistive RAM at Stanford in the beginning of October. Sponsored by IMEC and Stanford’s NMRTI (Non-Volatile Technology Research Initiative), the program features two days of talks, panel sessions and no doubt lots of… Read More
In a paper at the VLSI meeting in Hawaii, Professor Ken Takeuchi described using an ReRAM buffer with an SSD. He points to some major performance gains that one can expect from such a configuration in terms of energy, speed and lifetime. Is this an opportunity for ReRAM that could spur development of the technology? Read more in a post… Read More
Micron recently was awarded patents related to ReRAM. As everyone knows, patents are the lifeblood of technology based industries and the memory business is no different. But what can you learn from a patent? In the first of a series of Blogs, Christie Marrian moderator of the ReRAM-Forum asks that question in the context of patents… Read More
In doing some digging in preparation for the start of www.ReRAM-Forum.com Christie Marrian asks if ReRAM.CBRAM technology is approaching a ‘tipping point’ relative to NAND Flash. You can read more of his analysis over at the blog he moderates (ReRAM-Forum.com). Also a note to readers. The blog is interested in collecting new … Read More
