The vast majority of the attention given to the introduction of each new advanced process node focuses on lithographic updates. The common metrics quoted are the transistors per mm**2 or the (high-density) SRAM bit cell area. Alternatively, detailed decomposition analysis may be applied using transmission electron microscopy… Read More
It might seem I am straying from my normal beat in talking about implementation; after all, I normally write on systems, applications and front-end design. But while I’m not an expert in implementation, I was curious to understand how the trending applications of today (automotive, AI, 5G, IoT, etc.) create new demands on implementation,… Read More
At Intel back in the late 1970’s we wanted to know what process corner each DRAM chip and wafer was trending at so we included a handful of test transistors in the scribe lines between the active die. Having test transistors meant that we could do a quick electrical test at wafer probe time to measure the P and N channel transistor… Read More
In a former life I was the GM of a business where we built specialized structures used for semiconductor process bring-up, characterization and monitoring. These monitoring structures were placed in wafer scribe-lines and were used to monitor key parameters during wafer processing. The structures provided feedback to automated… Read More
Technology trends make the concerns with electronic noise a primary constraint that impacts many mainstream products, driving the need for “Design-for-Noise” practices. That is, scaling, and the associated reduction in the device operating voltage and current, in effect magnifies the relative importance of non-scalable… Read More
At the recent TSMC OIP symposium, a collaborative presentation by Synopsys and Xilinx highlighted the importance of incorporating the local FinFET device self-heating temperature increase on the acceleration of device reliability mechanisms.… Read More
