Mapping Focus and Dose onto BEOL Fabrication Effects

Mapping Focus and Dose onto BEOL Fabrication Effects
by Tom Simon on 03-16-2015 at 7:00 pm

With today’s ArF based lithography using 193nm wavelength light, we are hard up against the limitations imposed by the Raleigh equation. Numerous clever things have been devised to maximize yield and reduce feature size. These include 2 beam lithography, multiple patterning, immersion litho processes to improve NA, thinner… Read More


No EUV before 7nm?

No EUV before 7nm?
by Paul McLellan on 02-07-2013 at 1:31 pm

I was at the Common Platform Technology Forum this week. One of the most interesting sessions is IBM’s Gary Patton giving an overview of the state of semiconductor fabrication. Then, at lunchtime, he is one of the people that the press can question. In this post, I’m going to focus on Extreme Ultra-Violet (EUV) lithography.… Read More


The Future of Lithography and the End of Moore’s Law!

The Future of Lithography and the End of Moore’s Law!
by Paul McLellan on 07-24-2012 at 10:35 pm

Thisblog with a chart showing that the cost of given functionality on a chip is no longer going to fall is, I think, one of the most-read I’ve ever written on Semiwiki. It is actually derived from data nVidia presented about TSMC, so at some level perhaps it is two alpha males circling each other preparing for a fight. Or, in this… Read More


EUV Masks

EUV Masks
by Paul McLellan on 07-17-2012 at 11:00 pm

This is really the second part to this blog about the challenges of EUV lithography. The next speaker was Franklin Kalk who is CTO of Toppan Photomasks. He too emphasized that we can make almost arbitrarily small features but more and more masks are required (not, that I suspect, he would complain being in the mask business). For EUV… Read More


Dawn at the OASIS, Dusk for GDSII

Dawn at the OASIS, Dusk for GDSII
by Beth Martin on 03-28-2011 at 1:53 pm

For an industry committed to constant innovation, changes in any part of the design flow are only slowly adopted, and only when absolutely necessary. Almost 10 years ago, it became clear that shrinking process technologies would bring a massive growth of layout and mask data—rougly 50% per node. This avalanche of data seriously… Read More


With EUVL, Expect No Holiday

With EUVL, Expect No Holiday
by Beth Martin on 03-02-2011 at 1:12 pm

For a brief time in the 1990s, when 4X magnification steppers suddenly made mask features 4X larger, there was a period in the industry referred to as the “mask vendor’s holiday.” The party ended before it got started with the arrival of sub-wavelength lithography, and we all trudged back to the OPC/RET mines. Since then, the demands… Read More