At IEDM 2023, Naoto Horiguchi presented on CFETs and Middle of Line integration. I had a chance to speak with Naoto about this work and this write up is based on his presentation at IEDM and our follow up discussion. I always enjoy talking to Naoto, he is one of the leaders in logic technology development, explains the technology in … Read More
Tag: imec
CEO Interview: Harry Peterson of Siloxit
Harry Peterson is a mixed-signal chip designer with a BS in Physics from Caltech. He managed IC design groups within Fairchild, Kodak, Philips, Northern Telecom, Toshiba and Pixelworks. During sabbaticals he helped fly experiments on NASA’s orbiting satellite observatory (OSO-8) and build telescopes in the Canary… Read More
SPIE 2023 – imec Preparing for High-NA EUV
The SPIE Advanced Lithography Conference was held in February. I recently had the opportunity to interview Steven Scheer, vice president of advanced patterning process and materials at imec and review selected papers that imec presented.
I asked Steve what the overarching message was at SPIE this year, he said readiness for … Read More
IEDM 2022 – Imec 4 Track Cell
At the IEDM conference in December 2022, Imec presented “Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells,” I had a chance to not only read the paper and see it presented, but also to interview one of the authors Zsolt Tokie.
Logic designs are built up by standard cells such as inverters,… Read More
SEMICON West 2022 and the Imec Roadmap
SEMICON West 2022 was held from July 12th to 14th at the Moscone Center in San Francisco.
On Monday the 11th before the show, Imec held a technology forum at the Marriott Marquee right around the corner from the Moscone center. In recent years the Imec forums have shifted away from the process technology I cover to more of a system and… Read More
Imec Buried Power Rail and Backside Power Delivery at VLSI
At the VLSI Technology Symposium Imec presented on Buried Power Rails (BPR) and Backside Power Delivery (BSPD) in a paper entitled: “Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails”. I recently had a chance to interview one of the authors, Naoto Horiguchi about the work. I have interviewed … Read More
CMOS Forever?
Today, the CMOS chip manufacturing is the pinnacle of the human technology defining economy, society and perhaps us as modern humans. This was highlighted by the recent chip shortage, followed by the ‘shocking’ realization that more than 80% of all chips are manufactured in the Far East.
Important decisions need to be taken by … Read More
IBM at IEDM
IBM transferred their semiconductor manufacturing to GLOBALFOUNDRIES several years ago but still maintains a multibillion-dollar research facility at Albany Nanotech. IBM is very active at conferences such as IEDM and appears to have a good public relations department because they get a lot of press.
At the Litho Workshop … Read More
VLSI Technology Symposium – Imec Alternate 3D NAND Word Line Materials
At the 2021 VLSI Technology Symposium, Imec presented on Ruthenium (Ru) and Molybdenum (Mo) as alternate Word Line (WL) materials for 3D NAND Flash “First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D NAND Memory Devices”. I had an opportunity to interview one of the authors: Maarten Rosmeulen.… Read More
VLSI Technology Symposium – Imec Forksheet
FinFETs devices are reaching their limits for scaling. Horizontal Nanosheets (HNS) are a type of Gate All Around (GAA) device that offers better scaling and performance per unit area. HNS is the logical next step from FinFETs because HNS processing is similar to FinFETs with a limited number of process changes required.
At the … Read More
