Alchip Technologies Ltd., a global leader in high-performance computing (HPC) and artificial intelligence (AI) ASIC design and production services, continues its trajectory of rapid growth and technical leadership by pushing the boundaries of advanced-node silicon, expanding its global design capabilities, and building… Read More
IEDM turned 70 last week. This was cause for much celebration in the form of special events. One such event was a special invited paper on Tuesday afternoon from Intel’s Tahir Ghani, or Mr. Transistor as he is known. Tahir has been driving innovation at Intel for a very long time. He is an eyewitness to the incredible impact of the Moore’s… Read More
The world is abuzz with 3nm and 2nm technology availability. These processes offer the opportunity to pack far more on a single die than ever before. The complex digital systems contemplated will bring new AI algorithms to life and much more. But there is another side of the technology migration story. With all that digital processing… Read More
The VLSI Symposium on Technology and Circuits provides a deep dive on recent technical advances, as well as a view into the research efforts that will be transitioning to production in the near future. In a short course presentation at the Symposium, Marko Radosavljevic, from the Components Research group at Intel, provided … Read More
Intel recently provided a detailed silicon process and advanced packaging technology roadmap presentation, entitled “Intel Accelerated”. The roadmap timeline extended out to 2024, with discussions of Intel client, data center, and GPU product releases, and especially, the underlying technologies to be … Read More
The annual VLSI Symposium provides unique insights into R&D innovations in both circuits and technology. Indeed, the papers presented are divided into two main tracks – Circuits and Technology. In addition, the symposium offers workshops, forums, and short courses, providing a breadth of additional information.
At… Read More
The next transition from current FinFET devices at advanced process nodes is the “nanosheet” device, as depicted in the figure below. [1]
The FinFET provides improved gate-to-channel electrostatic control compared to a planar device, where the gate traverses three sides of the fin. The “gate-all-around” characteristics… Read More
As transistor dimensions shrink to follow Moore’s Law, the functionality of the gate used to switch on or off the current is actually being degraded by the short channel effect (SCE) [1-5]. Moreover, the simultaneous reduction of voltage aggravates the degradation, as will be discussed below.
A Practical Lower Limit of… Read More
