ANSYS Enters the League of 10nm Designs with TSMC

ANSYS Enters the League of 10nm Designs with TSMC
by Pawan Fangaria on 04-09-2015 at 7:00 pm

The way we are seeing technology progression these days is unprecedented. It’s just about six months ago, I had written about the intense collaboration between ANSYSand TSMCon the 16nm FinFET based design flow and TSMC certifying ANSYS tools for TSMC 16nm FF+ technology and also conferring ANSYS with “Partner of the Year” award.… Read More


FinFET Designs Need Early Reliability Analysis

FinFET Designs Need Early Reliability Analysis
by Pawan Fangaria on 02-19-2015 at 9:30 pm

In a world with mobile and IoT devices driven by ultra-low power, high performance and small footprint transistors, FinFET based designs are ideal. FinFETs provide high current drive, low leakage and high device density. However, a FinFET transistor is more exposed to thermal issues, electro migration (EM), and electrostatic… Read More


Solution for PI, TI & SI Issues in 3D-ICs

Solution for PI, TI & SI Issues in 3D-ICs
by Pawan Fangaria on 11-30-2014 at 7:00 pm

As we move towards packing more and more functionalities and increasing densities of SoCs, the power, thermal and signal integrity issues keep on rising. 3D-IC is a great concept to stack multiple dies on top of each other vertically. While it brings lot of avenues to package dies with multiple functions together, it has challenges… Read More


Predicting Component Temperature Early in Design

Predicting Component Temperature Early in Design
by Pawan Fangaria on 11-28-2014 at 7:00 am

In today’s electronics with multiple functions working together, heat generation is on the rise; sometimes it becomes intolerable. In fact components running at different temperatures can cause timing issues, and very high temperatures can lead to operational issues such as latch-up. An electronic system can contain chips,… Read More


Noise & Reliability of FinFET Designs – Success Stories!

Noise & Reliability of FinFET Designs – Success Stories!
by Pawan Fangaria on 11-01-2014 at 7:00 am

I think by now there has been good level of discussion on FinFET technology at sub-20 nm process nodes and this is an answer to ultra dense, high performance, low power, and billion+ gate SoC designs within the same area. However, it comes with some of the key challenges with respect to power, noise and reliability of the design. A FinFET… Read More


ANSYS Tools Shine at FinFET Nodes!

ANSYS Tools Shine at FinFET Nodes!
by Pawan Fangaria on 09-30-2014 at 4:00 pm

In the modern semiconductor ecosystem we are seeing rapid advancement in technology breaking past once perceived limits; 28nm, 20nm, 16-14nm, 10nm and we are foreseeing 7nm now. Double and multi-patterning are already being seen along with complex FinFET structures in transistors to gain the ultimate advantages in PPA from… Read More


RedHawk Excels – Customers Endorse

RedHawk Excels – Customers Endorse
by Pawan Fangaria on 05-28-2014 at 11:00 am

Since a few years, I have been following up Ansys Apachetools for semiconductor design, verification and sign-off. RedHawk is the most prominent platform of tools from Ansys, specifically for Power, Noise and Reliability Sign-off. It has witnessed many open endorsements from several of Ansyscustomers through open presentations,… Read More


Fast & Accurate Thermal Analysis of 3D-ICs

Fast & Accurate Thermal Analysis of 3D-ICs
by Pawan Fangaria on 04-14-2014 at 11:00 am

As Moore’s law started saturating on a single semiconductor die, the semiconductor community came up with the approach of growing vertically by stacking dies one above other in a 3D-IC arrangement. However, a major concern with a 3D-IC is that the heat generated by each die can get trapped in the stack, and hence it’s extremely important… Read More