By Hend Wagieh, Mentor Graphics
At advanced IC technology nodes, circuit designers are now encountering problems such as reduced voltage supply headroom, increased wiring parasitic resistance (Rp) and capacitance (Cp), more restrictive electromigration (EM) rules, latch-up, and electrostatic discharge (ESD) damage,… Read More
Tag: calibre
3D Transistors and IC Extraction Tools
Have you ever heard of a Super Pillar Transistor? It’s one of many emerging 3D transistor types, like Intel’s popular FinFET device.
In the race to continuously improve MOS transistors, these new 3D transistor structures pose challenges to the established IC extraction tool flows.
Foundries have to provide an Effective… Read More
Changing your IC Layout Methodology to Manage Layout Dependent Effects (LDE)
Smaller IC nodes bring new challenges to the art of IC layout for AMS designs, like Layout Dependent Effects (LDE). If your custom IC design flow looks like the diagram below then you’re in for many time-consuming iterations because where you place each transistor will impact the actual Vt and Idsat values, which are now a … Read More
Advanced Memory Cell Characterization with Calibre xACT 3D
Advanced process technologies for manufacturing computer chips enable more functionality, higher performance, and low power through smaller sizes. Memory bits on a chip are predicted to double every two years to keep up with the demand for increased performance.
To meet these new requirements for performance and power, memory… Read More
EDA Vendors Providing Secure Remote Support for an IC Design Flow
In my last corporate EDA job I had customers in Korea that were evaluating a new circuit simulator and getting strange results. When I asked, “Could you send me your test case?” the reply was always, “No, we cannot let any of our IC design data leave the building because of security concerns.”… Read More
December 1st – Hands-on Workshop with Calibre: DRC, LVS, DFM, xRC, ERC (Fremont, California)
I’ve blogged about the Calibre family of IC design tools before:
Smart Fill replaced Dummy Fill Approach in a DFM Flow
DRC Wiki
Graphical DRC vs Text-based DRC
Getting Real time Calibre DRC Results with Custom IC Editing
Transistor-level Electrical Rule Checking
Who Needs a 3D Field Solver for IC Design?
Prevention is Better… Read More
Parasitic Extraction—My Head Hurts!
By Carey Robertson, Director of Product Marketing, Mentor Graphics
IC physical verification requires a number of different types of checking, the most familiar being design rule checking (DRC), layout vs. schematic (LVS) checking, and parasitic extraction combined with circuit simulation. Fundamentally, it does not matter… Read More
Oct 27 – Hands-on Workshop with Calibre: DRC, LVS, DFM, xRC, ERC (Fremont, California)
I’ve blogged about the Calibre family of IC design tools before:
Smart Fill replaced Dummy Fill Approach in a DFM Flow
Graphical DRC vs Text-based DRC
Getting Real time Calibre DRC Results with Custom IC Editing
Transistor-level Electrical Rule Checking
How ST-Ericsson Improved DFM Closure using SmartFill
DFM closure is a growing issue these days even at the 45nm node, and IC designers at ST-Ericsson have learned that transitioning from dummy fill to SmartFill has saved them time and improved their DFM score.
The SOC
ST-Ericsson designed an SOC for mobile platforms called the U8500 and their foundry choice was a 45nm node at STMicroelectronics… Read More
Memory Cell Characterization with a Fast 3D Field Solver
Memory designers need to predict the timing, current and power of their designs with high accuracy before tape-out to ensure that all the design goals will be met. Extracting the parasitic values from the IC layout and then running circuit simulation is a trusted methodology however the accuracy of the results ultimately depend… Read More