ICSCRM 2026
On behalf of the organizing committee, it is my great honor and pleasure to welcome you to Yokohama, Japan, for the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026), September 27－October 2, 2026.
The ICSCRM conference series is the premier international forum focusing on all aspects of silicon carbide and related materials. With the goal of achieving carbon neutrality through significant energy savings, the importance of low-loss power devices using silicon carbide and related materials is increasing. Currently, efforts are being made to enhance the materials, improve the performance and reliability of the devices, and increase productivity to expand practical applications. Ongoing work to develop implementation and circuit technologies to fully utilize the device performance also continues. In the basic research field, new developments such as applications in harsh environments and quantum sensing are underway.
In this context, we have planned ICSCRM 2026 to bring researchers and engineers together to exchange the latest research and development results and share information on state-of-the-art technologies and products in the field of silicon carbide and related materials. We also hope to create opportunities for international exchanges among researchers and engineers in this field. Your attendance in scientific discussions and technical exhibitions will enhance the outcome of ICSCRM 2026 and create further steps for the future.
Once again, we welcome all presenters, participants, exhibitors, and sponsors to ICSCRM 2026 and hope all attendants enjoy the conference.
Sincerely,
Hidekazu Tsuchida (CRIEPI)
General Chair, ICSCRM 2026
Scope
The aim of this conference is to discuss recent advances in crystal growth, characterization, control of material properties, device fabrication and packaging technologies, system applications as well as quantum applications concerning silicon carbide (SiC) and related materials including nitride-, oxide- and diamond-based materials.
In addition, it will discuss latest research results in device design, fabrication, characterization, packaging, and system applications to improve device performance and reliability, and address to contribute the realization of cutting edge devices and systems for green innovation.
The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.
The scope of this conference covers the following topics on silicon carbide and related materials, including other wide bandgap (WBG) semiconductors such as III-nitrides, oxides, and diamond.
Topics
Material and Growth
Bulk and epitaxial growth, Wafer manufacturing
Defects and Characterization
Fundamental properties, Point and extended defects, Characterization and imaging techniques, Surface characterization and modification
Device Process and Characterization
MOS interface and insulators, Device fabrication processes (e.g. Implantation, Oxidation, Surface treatments, Metallization, Ohmic and Schottky contact formations, and Dry etching technologies)
Device Physics, Design, and Characterization
Device design and testing, Novel device concepts and Characterization, Modelling and Simulation, Novel measurements techniques
Devices and Module Reliability, Packaging, and Applications
Modular and driver-circuit technologies, System applications, Packaging and device reliabilities
Quantum Applications and Sensors
Theoretical and experimental studies, Optical and electrical quantum techniques, for Magnetic, Electric field, and Temperature sensors, Single-photon sources and detectors
for SiC and related materials including other wide bandgap semiconductors such as III-nitrides, oxides, and diamond.
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