In total we have blogged 41 times about FD-SOI on SemiWiki which has drawn an audience of 202,960 thus far. Of that traffic 31.68% came directly to SemiWiki (Newsletter), 30.13% came from search, 26.17% from social media (LinkedIn, FaceBook, Twitter, Google+, Reddit, etc…), and 11.99% came from other referring sites. The most… Read More
Sony Endorse FD-SOI to Attack Wearable & IoT
We are writing about FD-SOI technology since the beginning of 2013 in Semiwiki. So far, most of the design experience was related to ST-Microelectronics (even if IBM and GlobalFoundries have been actively working on the technology, probably more on a research mode than pure production). Sony being actively working to develop… Read More
FDSOI jump-start 2015 in Tokyo this week
This news in May 2014 that Samsung had licensed FD-SOI Technology from ST-Microelectronics was really amazing, as most of the industry was expecting this kind of agreement, but not with the #2 SC Company. But since May 2014 the news flow has been quite reduced, we can imagine that both SC companies had a lot work to do for transforming… Read More
IEDM: FD-SOI Down to 10nm
The big picture is that planar semiconductor transistors don’t really work below 20nm. The reason is that the gate does a poor job of controlling the channel since too much channel is too far from the gate and so there is a lot of leakage even when the transistor is nominally off. So the channel needs to be made thinner. One way … Read More
Which IP for FD-SOI Ecosystem?
We know that the best technology or product, even if it exhibits best in class and unmatched features, is almost of no use if lacking an ecosystem. If you think about a processor core, you will expect to find compatible communication bus and memories (inside the SoC) and operating system, compiler, debugger, etc. When dealing with… Read More
How many 28nm FDSOI SoC Design Starts in 2015? In 2020?
I would like to further discuss this graphic (presented during IP-SoC 2014 by John Koeter, VP of Marketing IP and prototyping, Synopsys) and focus on Active Design and Tapeouts at 28nm. In fact the very first activity appeared in Q1 2007, but it was only during 2010 that 28nm become popular, after the first Tapeouts coming in Q1 and… Read More
FD-SOI, an Opportunity for China?
Last month in Shanghai was a meeting of the FD-SOI consortium. The focus of the meeting was largely on the suitability of using FD-SOI to serve the Chinese market. The fabs in China are not right on the bleeding edge and are very cost-sensitive so 28nm is probably as advanced as they will get for a long time if not indefinitely. China … Read More
A couple of misconceptions about FD-SOI
We have extensively discussed in Semiwiki about FD-SOI technology, explaining the main advantages (Faster, Cooler, Simpler), sometimes leading to very deep technical discussions, thanks to Semiwiki readers and their posts. I have recently found an article “Samsung & ST Team Up on 28nm FD-SOI”. This article includes many… Read More
FD-SOI at 14nm
At the recent Semicon West, Michel Haond of ST Microelectronics had a presentation on 14nm FD-SOI, or what they more lengthily call UTBB FD-SOI (which when you expand it all out comes to Ultra Thin Body and Buried-Oxide Fully Depleted Silicon on Insulator). When Chenming Hu (or whoever in his group) came up with the term FinFET it … Read More
When TSMC advocates FD-SOI…
I found a patent recently (May,14 2013) granted to TSMC “Planar Compatible FDSOI Design Architecture”, the following sentences, directly extracted from this patent, advertise FDSOI design better than a commercial promotion! “Devices formed on SOI substrates offer many advantages over their bulk counterparts, including… Read More