Intel’s finfets too complex and difficult?

Intel’s finfets too complex and difficult?
by Tom Dillinger on 07-07-2012 at 7:00 pm

Thanks to SemiWiki readers for the feedback and comments on the previous “Introduction to FinFET Technology” posts – very much appreciated! The next installment on FinFET modeling will be uploaded soon.

In the interim, Dan forwarded the following link to me “ Intel’s FinFETs too complicated and difficult, says Read More


Introduction to FinFET technology Part II

Introduction to FinFET technology Part II
by Tom Dillinger on 04-27-2012 at 9:00 am

The previous post in this series provided an overview of FinFET devices. This article will briefly cover FinFET fabrication.

The major process steps in fabricating silicon fins are shown in Figures 1 through 3. The step that defines the fin thickness uses Sidewall Image Transfer (SIT). Low-pressure chemical vapor (isotropic)… Read More


Introduction to FinFET technology Part I

Introduction to FinFET technology Part I
by Tom Dillinger on 04-18-2012 at 6:00 pm

This is the first of a multi-part series, to introduce FinFET technology to SemiWiki readers. These articles will highlight the technology’s key characteristics, and describe some of the advantages, disadvantages, and challenges associated with this transition. Topics in this series will include FinFET fabrication,Read More