Top 10 Reasons to invest in Interactive Design Rule Checking tools

Top 10 Reasons to invest in Interactive Design Rule Checking tools
by Tom Dillinger on 10-01-2015 at 12:00 pm

One of the most energetic presentations at the recent TSMC OIP 2015 symposium was given by Tom Williams from Qualcomm, who shared his insights (and enthusiasm!) for Mentor’s Calibre RealTime interactive Design Rule Checking (iDRC) product.

Paraphrasing Tom’s presentation (and with a tip of the hat to David Letterman), here … Read More


Electromigration Analysis and FinFET Self-Heating

Electromigration Analysis and FinFET Self-Heating
by Tom Dillinger on 09-24-2015 at 12:00 pm

FinFET processes provide power, performance, and area benefits over planar technologies. Yet, a vexing problem aggravated by FinFET’s is the greater local device current density, which translates to an increased concern for signal and power rail metal electromigration reliability failures. There is a critical secondary… Read More


What’s the Difference between Emulation and Prototyping?

What’s the Difference between Emulation and Prototyping?
by Tom Dillinger on 09-10-2015 at 12:00 pm

Increasing system complexity requires constant focus on the optimal verification methodology. Verification environments incorporate a mix of: transaction-based stimulus and response monitors, (pseudo-)random testcase generation, and ultimately, system firmware and software. RTL statement and assertion coverage… Read More


Resolution Enhancement Technology – the key to Moore’s Law

Resolution Enhancement Technology – the key to Moore’s Law
by Tom Dillinger on 09-06-2015 at 10:00 am

The ability to extend photolithography utilizing 193i light sources to current process nodes is truly the key technical achievement that has enabled Moore’s Law to continue. The interplay between the exposure equipment, the materials – especially, resists and related coatings – and the fundamental principles… Read More


Introduction to FinFET Technology Part III

Introduction to FinFET Technology Part III
by Tom Dillinger on 11-21-2012 at 5:30 pm

The preceding two Semiwiki articles in this thread provided an overview to the FinFET structure and fabrication. The next three articles will discuss some of the unique modeling requirements and design constraints that FinFET’s introduce, compared to planar FET technology.

Due to the complexity of FinFET modeling – … Read More


Intel’s finfets too complex and difficult?

Intel’s finfets too complex and difficult?
by Tom Dillinger on 07-07-2012 at 7:00 pm

Thanks to SemiWiki readers for the feedback and comments on the previous “Introduction to FinFET Technology” posts – very much appreciated! The next installment on FinFET modeling will be uploaded soon.

In the interim, Dan forwarded the following link to me “ Intel’s FinFETs too complicated and difficult, says Read More


Introduction to FinFET technology Part II

Introduction to FinFET technology Part II
by Tom Dillinger on 04-27-2012 at 9:00 am

The previous post in this series provided an overview of FinFET devices. This article will briefly cover FinFET fabrication.

The major process steps in fabricating silicon fins are shown in Figures 1 through 3. The step that defines the fin thickness uses Sidewall Image Transfer (SIT). Low-pressure chemical vapor (isotropic)… Read More


Introduction to FinFET technology Part I

Introduction to FinFET technology Part I
by Tom Dillinger on 04-18-2012 at 6:00 pm

This is the first of a multi-part series, to introduce FinFET technology to SemiWiki readers. These articles will highlight the technology’s key characteristics, and describe some of the advantages, disadvantages, and challenges associated with this transition. Topics in this series will include FinFET fabrication,Read More