A little over a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. Quite a bit of it came out of the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on the SOI Consortium website (click here to see what’s there) – but keep checking… Read More
28nm FD-SOI: A Unique Sweet Spot Poised to Grow
I have been silently watching STMicroelectronics pursuing FD-SOI technology since quite a few years. FinFET was anyway getting more attention in the semiconductor industry because of several factors involved. But from a technology as well as economic perspective there are many plus points with FD-SOI. I remember my debate,… Read More
FDSOI Cost Analysis – Part I
One of the most frequently discussed concerns regarding FDSOI adoption is the higher starting wafer cost compared to bulk technology. This discussion was also brought up after my earlier post,… Read More
FDSOI As a Multi-Node Platform
One of the main criticisms of the FDSOI technology has been that it is a one-node solution at best and is not scalable to the future. Such arguments are typically based on the “gate-length-scaling” assumptions which do not capture the past and current trends of the CMOS technology as I discussed in my earlier post. Back in the early… Read More
FD-SOI: GlobalFoundries 22nm Update
As I said yesterday, last week was the GSA Analog/Mixed-Signal working group completely dedicated to FD-SOI. ST went first and had a presentation that was a mixture of an introduction to FD-SOI that I have covered times that are too numerous to mention. Then they did a dive into analog and RF capabilities for FD-SOI that went very … Read More
FD-SOI: Samsung Opens the Kimono a Little
Last week there was a meeting of the GSA Analog/Mixed-Signal (AMS) working group. It was completely focused on FD-SOI (I hate that name, especially since FinFET is also fully-depleted. I vote for BoxFETs.) It was a bases loaded meeting with presentations from ST Microelectronics (calling in from France close to midnight), Samsung… Read More
UTBB SOI can scale down to 5nm says Skotnicki…
…and FinFET down to 3nm. This assertion is the result of extensive research work made by Thomas Skotnicki, ST Fellow and Technical VP, Disruptive Technologies, leading to numerous publications, like in 1988 in IEEE EDL or in 2008 in IEEE TED paper. I say extensive, I should also say long, very long, as it took almost 30 years for the… Read More
FD-SOI: a Gentle Introduction
Over the last couple of weeks, FD-SOI has been in the news with GlobalFoundries announcement of a 22nm FD-SOI process that will run in the Dresden Fab. Also, earlier in the week I talked to Thomas Skotnicki about the saga (and it is a saga) of how FD-SOI got from his PhD thesis to volume manufacturing and global deployment. But there … Read More
Thomas Skotnicki: FD-SOI 26 Years in the Making
It seems to be FD-SOI week yet again. I talked to Thomas Skotnicki this morning. He is the father of thin-box FD-SOI and its birth is an interesting story. The story began 26 years ago (so not quite as far back as the photo!).
Thomas is of Polish origins (he is actually Tomeczek) and grew up in Warsaw where he earned his PhD. In 1983 in Canterbury,… Read More
GlobalFoundries Endorse ST/LETI FD-SOI 22nm!
The LETI days and the associated FD-SOI workshop took place in Grenoble (France) last week and I could not attend in person… but I had the opportunity to speak with LETI CEO Marie Semaria. Before going into details into the 3 key messages from the LETI (FD-SOI, Silicon Impulse and Cool Cube), it’s important to share the great news from… Read More