Lam Research performing like a Lion – Chip equip on steroids

Lam Research performing like a Lion – Chip equip on steroids
by Robert Maire on 04-29-2021 at 10:00 am

NASDAQ LRCX LAM

– Business is about as good as it gets- $75B WFE in 2021?
– China remains strong at 32% despite SMIC lack of license
– NAND remains 48% of revs versus 31% foundry
– DRAM steady @ 14% – Service was record $1.3B

Strong results in a strong market

Lam reported revenues of $3.85B and EPS of $7.49 for the March… Read More


SPIE 2021 – Applied Materials – DRAM Scaling

SPIE 2021 – Applied Materials – DRAM Scaling
by Scotten Jones on 04-08-2021 at 10:00 am

Slide1

At the SPIE Advanced Lithography Conference in February 2021, Regina Freed of Applied Materials gave a paper: “Module-Level Material Engineering for Continued DRAM Scaling”. Applied Materials provided me with the presentation and was kind enough to set up an interview for me with Regina Freed.

I also spoke to Regina Freed last… Read More


Micron- Optane runs out of Octane- Bye Bye Lehi- US chip effort takes a hit

Micron- Optane runs out of Octane- Bye Bye Lehi- US chip effort takes a hit
by Robert Maire on 03-21-2021 at 6:00 am

Intel Optane Micron SemiWiki

– Micron shuts down once promising XPoint
– Lehi Utah fab to be sold off- Had been a $400M drain
– Unique memory couldn’t follow flash down cost/yield curve
– Savings helps Micron but its now just another memory maker

XPoint “Coulda been a contender”

XPoint should have amounted to more… Read More


Executive Interview: Casper van Oosten of Intermolecular, Inc.

Executive Interview: Casper van Oosten of Intermolecular, Inc.
by Daniel Nenni on 03-19-2021 at 6:00 am

Casper Van Oosten cut out 1

Casper van Oosten is the Business Field Head and Managing Director for Intermolecular, Inc., acquired by Merck KGaA, Darmstadt, Germany in 2019. Prior to this role, Casper worked in various roles on Eyrise™ Dynamic Liquid Crystal Window in Veldhoven, the Netherlands, at an affiliate of Merck KGaA, Darmstadt, Germany. Casper… Read More


Will EUV take a Breather in 2021?

Will EUV take a Breather in 2021?
by Robert Maire on 02-07-2021 at 6:00 am

KLA EUV Slowdown

-KLAC- Solid QTR & Guide but flat 2021 outlook
-Display down & more memory mix
-KLAC has very solid Dec Qtr & guide but 2021 looks flattish
-Mix shift to memory doesn’t help- Display weakness
-Despite flat still looking at double digit growth
-EUV driven business may see some slowing from digestion

As always, … Read More


China Semiconductor Bond Bust!

China Semiconductor Bond Bust!
by Robert Maire on 11-25-2020 at 10:00 am

China Semiconductor Bond Bust

– Tsinghua $198M Bond Bust
– Good for memory: Samsung Micron LG Toshiba –
– Not good for chip equipment
– Could China Credit Crunch hit more than foundry embargo?
– Damage to China memory positive for other memory makers
– Not good for chip equip if customers can’t get money

China’s… Read More


2021 will be the year of DRAM!

2021 will be the year of DRAM!
by Robert Maire on 11-15-2020 at 6:00 am

Robert Maire Bloomberg

2020 has been a NAND growth year-2021 will be the year of DRAM. While foundry logic has gotten all the credit in 2020 the reality is that NAND has been up 2X in 2020 for semiconductor equipment provider Applied Materials (AMAT). It is expected that NAND will be flat in 2021 while DRAM will take over the growth slot with foundry/logic … Read More


Application-Specific Lithography: a 28 nm Pitch DRAM Active Area

Application-Specific Lithography: a 28 nm Pitch DRAM Active Area
by Fred Chen on 07-19-2020 at 2:00 pm

Application Specific Lithography 28 nm Pitch DRAM Active Area

In the recent DRAM jargon, “1X”, “1Y”, “1Z”, etc. have been used to express all the sub-20 nm process generations. It is almost possible now to match them to real numbers which are roughly the half-pitch of the DRAM active area, such as 1X=18, 1Y ~ 17, etc. At this rate, 14 nm is somewhere around

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AI Requires Tailored DRAM Solutions

AI Requires Tailored DRAM Solutions
by Admin on 06-18-2020 at 11:00 am

Join Rambus for a webinar exploring how Dynamic Random Access Memory (DRAM) is a key enabler for Artificial Intelligence (AI). Featuring Frank Ferro, senior director of product management for memory interface IP at Rambus, and Shane Rau, research vice president, computing semiconductors at IDC, this

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Reliable Line Cutting for Spacer-based Patterning

Reliable Line Cutting for Spacer-based Patterning
by Fred Chen on 05-06-2020 at 6:00 am

Reliable Line Cutting for Spacer based Patterning

Spacer-defined patterning is an expected requirement for advanced semiconductor patterning nodes with feature sizes of 25 nm or less. As the required gaps between features go well below the lithography tool’s resolution limit, the use of cut exposures to separate features is used more often, especially in chips produced… Read More