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EUV lithography is widely perceived to be the obvious choice to replace DUV lithography due to the shorter wavelength(s) used. However, there’s a devil in the details, or a catch if you will.
Electrons have the last word
The resist exposure is completed by the release of electrons following the absorption of the EUV photon.… Read More
Extreme ultraviolet (EUV) lithography targets sub-20 nm resolution using a wavelength range of ~13.3-13.7 nm (with some light including DUV outside this band as well) and a reflective ring-field optics system. ASML has been refining the EUV tool platform, starting with the NXE:3300B, the very first platform with a numerical
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The current leading edge of advanced lithography nodes (e.g., “7nm” or “1Z nm”) features pitches (center-center distances between lines) in the range of 30-40 nm. Whether EUV (13.5 nm wavelength) or ArF (193 nm wavelength) lithography is used, one thing for certain is that the minimum imaged pitch … Read More
EUV Resist Degradation with Outgassing at Higher Doses