The Need for Low Pupil Fill in EUV Lithography

The Need for Low Pupil Fill in EUV Lithography
by Fred Chen on 03-15-2020 at 10:00 am

The Need for Low Pupil Fill in EUV Lithography 1

Extreme ultraviolet (EUV) lithography targets sub-20 nm resolution using a wavelength range of ~13.3-13.7 nm (with some light including DUV outside this band as well) and a reflective ring-field optics system. ASML has been refining the EUV tool platform, starting with the NXE:3300B, the very first platform with a numerical

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Layout Pattern Matching for DRC, DFM, and Yield Improvement

Layout Pattern Matching for DRC, DFM, and Yield Improvement
by Tom Dillinger on 06-01-2016 at 12:00 pm

It is truly amazing to consider the advances in microelectronic process development, using 193i photolithography. The figure below is a stark reminder of the difference between the illuminating wavelength and the final imaged geometries. This technology evolution has been enabled by continued investment in mask data generation… Read More