The Evolution of the Extension Implant Part V

The Evolution of the Extension Implant Part V
by Daniel Nenni on 05-13-2019 at 7:00 am

Part 4 of this series discussed how a transistor Extension could be fabricated in a planar device without using an implant operation, and is instead formed using a preferential etch followed by a selective epitaxial deposition. This final installment of the series will present the formation of an Extension in a FinFET transistor… Read More


The Evolution of the Extension Implant Part IV

The Evolution of the Extension Implant Part IV
by Daniel Nenni on 05-10-2019 at 2:00 pm

Perhaps the most innovative and effective Extension implant does not involve an implant at all, but is instead an etch followed by a selective epitaxial deposition.

In this Extension fabrication methodology the Source/Drains regions in a planar device are etched away in the normal fashion to accommodate the replacement Source/Drain… Read More


The Answer to Why Intel PMOS and NMOS Fins are Different Sizes

The Answer to Why Intel PMOS and NMOS Fins are Different Sizes
by Daniel Nenni on 04-08-2019 at 7:00 am

Like many others, we have often wondered why the PMOS fins on advanced microprocessors from Intel are narrower than the NMOS fins (6nm versus 8nm). This unusual dimensional difference first occurred at the 14nm node and it coincided with the introduction of Solid State Doping (SSD) of the fins at this node.


We have concluded that… Read More