Part 4 of this series discussed how a transistor Extension could be fabricated in a planar device without using an implant operation, and is instead formed using a preferential etch followed by a selective epitaxial deposition. This final installment of the series will present the formation of an Extension in a FinFET transistor… Read More
Perhaps the most innovative and effective Extension implant does not involve an implant at all, but is instead an etch followed by a selective epitaxial deposition.
In this Extension fabrication methodology the Source/Drains regions in a planar device are etched away in the normal fashion to accommodate the replacement Source/Drain… Read More
Like many others, we have often wondered why the PMOS fins on advanced microprocessors from Intel are narrower than the NMOS fins (6nm versus 8nm). This unusual dimensional difference first occurred at the 14nm node and it coincided with the introduction of Solid State Doping (SSD) of the fins at this node.
We have concluded that… Read More