On Friday April 12th Intel held a press briefing on their adoption of High NA EUV with Intel fellow and director of lithography Mark Phillips.
In 1976 Intel built Fab 4 in Oregon, the first Intel fab outside of California. With the introduction of 300mm Oregon became the only development site for Intel with large manufacturing, development,… Read More
ASML- better EPS but weaker revenues- 2024 recovery on track
China jumps 10% to 49%- Memory looking better @59% of orders
Order lumpiness increases with ASP- EUV will be up-DUV down
“Passing Bottom” of what has been a long down cycle
Reported revenue was Euro5.3B and EPS of Euro3.11… Read More
– High NA EUV’s coming out party – “Dawn” of the Angstrom Era
– Well attended, positive vibes, not much new but good progress
– Concerns about Samsung slowing spend while Intel accelerates
– KLA reticle inspection quandary – Risky business in China
The majority of EUV production is on 5nm and 3nm node, implemented by late 2022. Metal oxide resists have not been brought into volume production yet [1,2], meaning that only organic chemically amplified resists (CARs) have been used instead until now. These resists have a typical absorption coefficient of 5/um [3,4], which means
– ASML orders more than triple sequentially- Utilization increases
– Management remains conservative with flat revenues 2024 vs 2023
– Recovery will be slow, targeting 2025- Long & weak cyclical bottom
– Litho orders are leading indicator of future wider recovery
News suggests Intel will get 6 of first 10 High NA tools made by ASML in 2024
An industry news source, Trendforce, reports… Read More
– SPIE EUV & Photomask conference well attended with great talks
– Chip industry focused on next gen High NA EUV & what it impacts
– Do big chips=big masks? Another Actinic tool?
– AI & chip tools, a game changer- China pre-empting more sanctions
High-NA EUV lithography is the anticipated new lithography technology to be introduced for the 2nm node. Essentially, it replaces the 0.33 numerical aperture of current EUV systems with a higher 0.55 numerical aperture (NA). This allows the projection of smaller spot sizes and smaller pitches, roughly 60% smaller compared … Read More
Current 1a-DRAM and 5/4nm foundry nodes have minimum pitches in the 28 nm pitch range. The actual 28 nm pitch patterns are one-dimensional active area fins (for both DRAM and foundry) as well as one-dimensional lower metal lines (in the case of foundry). One can imagine that, for a two-dimensional routing pattern, both horizontal… Read More
The “1.xnm” node on most roadmaps to indicate a 16-18 nm metal line pitch [1]. The center-to-center spacing may be expected to be as low as 22-26 nm (sqrt(2) times line pitch). The EXE series of EUV (13.5 nm wavelength) lithography systems from ASML feature a 0.55 “High” NA (numerical aperture), targeted… Read More
