ASML is exploring how to produce more than 110 extreme ultraviolet lithography machines in 2028, reflecting the extraordinary investment flowing into artificial intelligence infrastructure. The Dutch semiconductor-equipment company expects to manufacture at least 80 EUV systems in 2027 and is considering another production… Read More
Tag: high NA EUV
ASML Has High-NA and Chipmakers Can’t Say No
ASML’s grip on the most advanced corner of chip manufacturing is tightening. The Dutch company, already the sole supplier of extreme ultraviolet lithography systems, is winning broader industry support for High Numerical Aperture EUV, or High NA, its next-generation technology for printing smaller and denser circuitry.… Read More
Intel and TSMC Take Different Paths to High-NA EUV
Intel and TSMC are pursuing the same objective—manufacturing smaller, faster, and more energy-efficient semiconductors—but they have adopted different strategies for advanced lithography. Intel moved early to develop High-Numerical-Aperture Extreme Ultraviolet lithography, commonly called High-NA EUV, while TSMC… Read More
ASML High-NA EUV is Not Ready for High-Volume Production
Contrary to the popular press, ASML High-NA EUV is not ready for logic production yet—and it may never be, at least not in the form originally envisioned. If you remember how long it took conventional EUV to become production-worthy—arguably 5–10 years—this should not come as a surprise. More importantly, this is no longer just… Read More
Beyond Moore’s Law: High NA EUV Lithography Redefines Advanced Chip Manufacturing
The imec installation of the ASML EXE:5200 High Numerical Aperture (High NA) extreme ultraviolet (EUV) lithography system at imec represents a pivotal advancement in semiconductor manufacturing and research. This system, installed in imec’s 300 mm cleanroom in Leuven, Belgium, introduces unprecedented lithographic resolution… Read More
Via Multipatterning Regardless of Wavelength as High-NA EUV Lithography Becomes Too Stochastic
For the so-called “2nm” node or beyond, the minimum metal pitch is expected to be 20 nm or even less, while at the same time, contacted gate pitch is being pushed to 40 nm [1]. Therefore, we expect via connections that can possibly be as narrow as 10 nm (Figure 1)! For this reason, it is natural to expect High-NA EUV lithography as the go-to
High-NA Hard Sell: EUV Multi-patterning Practices Revealed, Depth of Focus Not Mentioned
In High-NA EUV lithography systems, the numerical aperture (NA) is expanded from 0.33 to 0.55. This change has been marketed as allowing multi-patterning on the 0.33 NA EUV systems to be avoided. Only very recently have specific examples of this been provided [1]. In fact, it can be shown that double patterning has been implemented… Read More
CEO Interview with Dinesh Bettadapur of Irresistible Materials
Dinesh Bettadapur serves as the Chief Executive Officer of Irresistible Materials Ltd. Dinesh has over 20 years of executive management experience in the semiconductor industries and has held significant leadership roles encompassing general management, P&L management, sales, business development, strategic alliances,… Read More
Rethinking Multipatterning for 2nm Node
Whether EUV or DUV doesn’t matter at 20 nm pitch
The International Roadmap for Devices and Systems, 2022 Edition, indicates that the “2nm” node due in 2025 (this year) has a minimum (metal) half-pitch of 10 nm [1]. This is, in fact, less than the resolution of a current state-of-the-art EUV system, with a numerical aperture… Read More
Trump whacking CHIPS Act? When you hold the checkbook, you make up the new rules
- News reports that Trump will change CHIPS Act to suit his views
- We specifically predicted this months ago as deals closed 11th hour
- Blue states, enemies list & foreign entities likely to get cut
- Big changes/cuts likely to a program Trump roundly criticized
Reuters: Exclusive: Trump prepares to change US CHIPS Act conditions,… Read More
