Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography

Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography
by Fred Chen on 06-19-2022 at 10:00 am

High NA EUV Lithography 1

The next generation of EUV lithography systems are based on a numerical aperture (NA) of 0.55, a 67% increase from the current value of 0.33. It targets being able to print 16 nm pitch [1]. The High-NA systems are already expected to face complications from four issues: (1) reduced depth-of-focus requires thinner resists, which… Read More


Has KLA lost its way?

Has KLA lost its way?
by Robert Maire on 05-01-2022 at 6:00 am

KLA SPIE 2022

-KLA has another great QTR in face of overwhelming demand
-Supply chain issues obliterated by backlog
-Longer term technology leadership concerns are increasing
-We see limited upside near term & remain cyclically cautious

Another great quarter- demand remains super strong

KLA’s performance remains great as does… Read More


Cautions In Using High-NA EUV

Cautions In Using High-NA EUV
by Fred Chen on 09-22-2021 at 6:00 am

Cautions In Using High NA EUV

High-NA EUV has received a lot of attention ever since Intel put the spotlight on its receiving the first 0.55 NA EUV tool from ASML [1], expected in 2025. EUV itself has numerous issues which have been enumerated by myself and others, most notoriously the stochastic defects issue. There are also a host of issues related to the propagation… Read More


Resist Development for High-NA EUV

Resist Development for High-NA EUV
by Tom Dillinger on 07-01-2021 at 10:00 am

EUV scaling

The successful transition to a new fabrication process from development to high volume manufacturing requires a collective, collaborative effort among process engineers, equipment manufacturers, and especially, chemical suppliers.  Of particular importance is the chemistry of the photoresist materials and their interaction… Read More