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As a consequence of having a ~13.5 nm wavelength, EUV photons transfer ~90% of their energy to ionized photoelectrons. Thus, EUV lithography is fundamentally mostly EUV photoelectron lithography. The actual resolution becomes dependent on photoelectron trajectories.
Photoelectron trajectories in EUV lithography were… Read More
Resist Development for High-NA EUVby Tom Dillinger on 07-01-2021 at 10:00 amCategories: Events, Foundries, Intel
The successful transition to a new fabrication process from development to high volume manufacturing requires a collective, collaborative effort among process engineers, equipment manufacturers, and especially, chemical suppliers. Of particular importance is the chemistry of the photoresist materials and their interaction… Read More
Irresistible Materials (IM) is a spin-out of the University of Birmingham in the United Kingdom that has been doing research on Photoresist and Spin-On Carbon hard masks for 10 years, most recently with Nano-C on chemistry development. IM has developed a unique EUV photoresist and they are now looking for partners to help bring… Read More