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With the announcement of early PDK availability for the 3nm GAA process node, designers are extremely interested in the characteristics of the new “gate-all-around” transistor structure and how it compares to the existing FinFET device. The GAA transistor has been denoted as a (horizontal) nanowire or nanosheet.
I will talk… Read More
Extraction Features for 7nmby Tom Dillinger on 08-21-2017 at 12:00 pmCategories: Cadence, EDA, FinFET
Frequent Semiwiki readers are familiar with the importance of close collaboration between the foundries and EDA tool developers, to provide the crucial features required by new process nodes. Perhaps the best illustration of the significance of this collaboration is the technical evolution of layout parasitic extraction.… Read More
The way we are seeing technology progression these days is unprecedented. It’s just about six months ago, I had written about the intense collaboration between ANSYSand TSMCon the 16nm FinFET based design flow and TSMC certifying ANSYS tools for TSMC 16nm FF+ technology and also conferring ANSYS with “Partner of the Year” award.… Read More
Since a few years, I have been following up Ansys Apachetools for semiconductor design, verification and sign-off. RedHawk is the most prominent platform of tools from Ansys, specifically for Power, Noise and Reliability Sign-off. It has witnessed many open endorsements from several of Ansyscustomers through open presentations,… Read More