The headline is: Ansys Signs Definitive Agreement to Acquire Diakopto, Expands Multiphysics Simulation Portfolio for Semiconductor Designers. The acquisition complements Ansys’ existing signoff solutions and enables integrated circuit (IC) designers to detect problems earlier in the design flow.
Which is certainly… Read More
MOSFET gate resistance is a very important parameter, determining many characteristics of MOSFETs and CMOS circuits, such as:
• Switching speed
• RC delay
• Fmax – maximum frequency of oscillations
• Gate (thermal) noise
• Series resistance and quality factor in MOS capacitors and varactors
• Switching speed and uniformity… Read More
Resistance checks between ESD diode cells and pads or power clamps, and current density analysis for such current flows are commonly used for ESD networks verification [1]. When such simulations use standard post-layout netlists generated by parasitic extraction tools, the calculated resistances may be dramatically higher… Read More
This Diakopto paper discusses for the first time, a new effect – a false electrical mismatch in post-layout simulations for perfectly symmetric nets. This effect is caused by the difference in distributions of parasitic coupling capacitors over the nodes of parasitic resistor networks, even for symmetric nets. This, in turn,… Read More
Maxim is a scientist, engineer, and entrepreneur. His expertise is in physics, mathematics, semiconductor devices, and EDA. Prior to co-founding Diakopto, Maxim worked at Apple’s SEG (Silicon Engineering Group), where he was responsible for parasitic extraction. Before Apple, he was CTO of Silicon Frontline Technology,… Read More
