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With metal interconnect pitches shrinking in advanced technology nodes, the center-to-center (C2C) separations between vias are also expected to shrink. For a 5/4nm node minimum metal pitch of 28 nm, we should expect vias separated by 40 nm (Figure 1a). Projecting to 3nm, a metal pitch of 24 nm should lead us to expect vias separated… Read More
At SEMICON West I had a chance to catch up with Mike Lercel of ASML. In this article I am going to combine ASML presentation material from the SPIE Advanced Lithography Conference, Mike’s SEMICON presentation, my discussions with Mike at SEMICON and a few items from ASML’s recent earnings call.
DUV
ASML continues to improve DUV systems.… Read More
