A recent process enhancement in advanced nodes is to support the fabrication of contacts directly on the active gate area of a device. At the recent VLSI 2020 Symposium, the critical advantages of this capability were highlighted, specifically in the context of the behavior of RF CMOS devices needed for 5G designs.
Introduction… Read More
On August 27, 2018, GLOBALFOUNDRIES (GF) announced that they were no longer going to compete in the race to the next smaller semiconductor node, at that time, the 7nm node. While surprising to some, on further analysis this move made sense. TSMC had announced its plan to invest around $25B in the 5nm technology node. GF revenue is … Read More
As analog and mixed-signal designers move to very advanced geometries, they must grapple with more and more complex considerations of the silicon. Not only do nanometer CMOS devices have limitations in terms of analog-relevant characteristics such gain and noise performance, but they also introduce new sources of variation… Read More