Gate Resistance in IC design flow

Gate Resistance in IC design flow
by Maxim Ershov on 05-03-2023 at 6:00 am

Figure1 9

MOSFET gate resistance is a very important parameter, determining many characteristics of MOSFETs and CMOS circuits, such as:

• Switching speed
• RC delay
• Fmax – maximum frequency of oscillations
• Gate (thermal) noise
• Series resistance and quality factor in MOS capacitors and varactors
• Switching speed and uniformity… Read More


CEO Interview: Maxim Ershov of Diakopto

CEO Interview: Maxim Ershov of Diakopto
by Daniel Nenni on 09-24-2021 at 4:00 am

Maxim Ershov

Maxim is a scientist, engineer, and entrepreneur. His expertise is in physics, mathematics, semiconductor devices, and EDA. Prior to co-founding Diakopto, Maxim worked at Apple’s SEG (Silicon Engineering Group), where he was responsible for parasitic extraction. Before Apple, he was CTO of Silicon Frontline Technology,… Read More