The Evolution of the Extension Implant Part III

The Evolution of the Extension Implant Part III
by Daniel Nenni on 05-06-2019 at 7:00 am

The problem of traditional FinFET Extension Implant doping concerns the awkward 3-dimensional structure of the fin. Because the Extension Implant defines the conductive electrical pathway between the Source/Drains and the undoped channel portion of the fin, it is essential that the fin be uniformly doped all three of its surfaces… Read More


The Answer to Why Intel PMOS and NMOS Fins are Different Sizes

The Answer to Why Intel PMOS and NMOS Fins are Different Sizes
by Jerry Healey on 04-08-2019 at 7:00 am

Like many others, we have often wondered why the PMOS fins on advanced microprocessors from Intel are narrower than the NMOS fins (6nm versus 8nm). This unusual dimensional difference first occurred at the 14nm node and it coincided with the introduction of Solid State Doping (SSD) of the fins at this node.


We have concluded that… Read More