The “1.xnm” node on most roadmaps to indicate a 16-18 nm metal line pitch . The center-to-center spacing may be expected to be as low as 22-26 nm (sqrt(2) times line pitch). The EXE series of EUV (13.5 nm wavelength) lithography systems from ASML feature a 0.55 “High” NA (numerical aperture), targeted… Read More
Can Attenuated Phase-Shift Masks Work For EUV?
Normalized image log-slope (NILS) is probably the single most essential metric for describing lithographic image quality. It is defined as the slope of the log of intensity, multiplied by the linewidth , NILS = d(log I)/dx * w = w/I dI/dx. Essentially, it gives the % change in width for a given % change in dose. This is particularly… Read More