The latest significant development in EUV lithography technology is the arrival of High-NA systems. Theoretically, by increasing the numerical aperture, or NA, from 0.33 to 0.55, the absolute minimum half-pitch is reduced by 40%, from 10 nm to 6 nm. However, for EUV systems, we need to recognize that the EUV light (consisting … Read More
Why NA is Not Relevant to Resolution in EUV Lithography
