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Ongoing investigations of EUV stochastics [1-3] have allowed us to map combinations of critical dimension (CD) and pitch which are expected to pose a severe risk of stochastic defects impacting the use of EUV lithography. Figure 1 shows a typical set of contours of fixed PNOK (i.e., the probability of a feature being Not OK due… Read More
At SEMICON West I attended the imec technology forum, multiple Tech Spot presentations and conducted a number of interviews relevant to advanced lithography and EUV. In this article I will summarize what I learned plus make some comments on the outlook for EUV.… Read More
