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The occurrences of notorious stochastic defects in EUV lithography have resulted in CD or corresponding dose windows with the lower and higher bounds being characterized as “cliffs” [1-3], since the defect density increases exponentially when approaching these bounds. The defects at lower doses have been attributed to the… Read More
EUV lithography is a complicated process with many factors affecting the production of the final image. The EUV light itself doesn’t directly generate the images, but acts through secondary electrons which are released as a result of ionization by incoming EUV photons. Consequently, we need to be aware of the fluctuations… Read More
