EUV lithography systems continue to be the source of much hope for continuing the pace of increasing device density on wafers per Moore’s Law. Recently, although EUV systems were originally supposed to help the industry avoid much multipatterning, it has not turned out to be the case [1,2]. The main surprise has been the
Horizontal, Vertical, and Slanted Line Shadowing Across Slit in Low-NA and High-NA EUV Lithography Systems
