Impact of Varying Electron Blur and Yield on Stochastic Fluctuations in EUV Resist

Impact of Varying Electron Blur and Yield on Stochastic Fluctuations in EUV Resist
by Fred Chen on 05-04-2025 at 4:00 pm

P30 stochastics vs attenuation length

A comprehensive update to the EUV stochastic image model

In extreme ultraviolet (EUV) lithography, photoelectron/secondary electron blur and secondary electron yield are known to drive stochastic fluctuations in the resist [1-3], leading to the formation of random defects and the degradation of pattern fidelity at advanced

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Spot Pairs for Measurement of Secondary Electron Blur in EUV and E-beam Resists

Spot Pairs for Measurement of Secondary Electron Blur in EUV and E-beam Resists
by Fred Chen on 08-14-2022 at 8:00 am

Spot Pairs for Measurement of Secondary Electron Blur in EUV

There is growing awareness that EUV lithography is actually an imaging technique that heavily depends on the distribution of secondary electrons in the resist layer [1-5]. The stochastic aspects should be traced not only to the discrete number of photons absorbed but also the electrons that are subsequently released. The electron… Read More