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TSMC Financial Update Q4 2012!

TSMC Financial Update Q4 2012!
by Daniel Nenni on 11-11-2012 at 4:00 pm
Categories: Foundries, TSMC

The weather in Taiwan last week was very nice, not too hot but certainly not cold. The same could be said for the TSM stock which broke $16 after the October financial report where TSMC reported a sales increase of 15% over September. Revenues for this year thus far increased 19% over last year so why isn’t TSM stock at $20 like I predicted earlier this year?

I blame the Q4 and Q1 Fear, Uncertainty, and Doubt (FUD) everyone is talking about. I blame the “US Fiscal Cliff” everyone is writing about, it even has a wiki page! I was asked by politicians if my family was better off now versus four years ago and the answer is YES, absolutely! Why? Because money is cheap, the interest rate on my debt is less than half, and because I continue to invest in the future.

TSMC has done the same thing. TSMC has spent a record amount this year on CAPEX and R&D and it shows. 28-nanometer revenue and shipments more than doubled during Q3 2012 and total 28nm wafer revenue increased from 7% in Q2 to 13%. Expect 28nm revenue to exceed 20% of total wafer revenue in Q4 and will be more than 10% for the whole year.

TSMC 28nm capacity increased 5% to 3.8 million wafers in Q3 and was fully utilized. As Co-Chief Operating Officer Dr. Shang-Yi Chiang said at ARM TechCon last month, “The biggest 28nm challenge was forecasting with demand for 28nm this year being 2-3x of what was forecast.”

Congratulations to everyone on the success of 28nm TSMC. Teamwork, patience, and investment wins again! Let us not forget the “28nm does not work” FUD at the beginning of the year. As I predicted 28nm will be the best process node we will see for years to come, believe it. Since the other foundries are still struggling with it, I predict 28nm will be the most successful node in the history of TSMC. 28nm may even get a chapter in the book Paul McLellan and I are writing, if not a full chapter, certainly an honorable mention.

Back to the fiscal cliff – what will I do in the next four years? I will continue to invest but also pay down my debt. I did support President Obama for a second term and I strongly suggest he do the same, invest and pay down the National Debt. I offer the same advice to TSMC, continue to invest and the fabless semiconductor ecosystem will have another great four years!

Last quarter TSMC invested $1B in ASML for EUV and 450mm technology. TSMC also bought 35 acres of land in Zuhan (near Hsinchu Science Park) for another GigaFab research and manufacturing facility that will produce 450mm wafers starting at 7nm. TSMC 2013 CAPEX and R&D is expected to be “in the same ball park” as 2012, of course that all depends on 20nm and 16nm FinFETS and how accurate the 2013 forecast is. My guess is that TSMC 2013 revenue will beat 2012 by single digits and, due to the cost of 20nm and 16nm, CAPEX and R&D will also grow by single digits.

Remember, I’m not an analyst, journalist, or financial expert, I’m just a blogger who drives a Porsche.

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ARM adopting SpyGlass IP Kit, joining TSMC’s soft IP9000 Quality Assessment Program

ARM adopting SpyGlass IP Kit, joining TSMC’s soft IP9000 Quality Assessment Program
by Eric Esteve on 11-07-2012 at 12:17 pm
Categories: EDA, Foundries, TSMC

More than one year old now, TSMC’s soft IP quality assessment program is a joint effort between TSMC and Atrenta to deploy a series of SpyGlass checks that create detailed reports of the completeness and robustness of soft IP. This soft IP quality program has been the first to be initiated by a Silicon foundry on other than “Hard IP”, and is demonstrating how IP support, whether hard or soft, is important in TSMC strategy to best support their customers and shorten the design to Silicon delay and reduce the TTM. Currently, over 15 soft IP suppliers have been qualified through the program, including ARM, as recently announced by TSMC at ARM TechCon.

How does the flow works? Atrenta’s SpyGlass® platform provides a powerful combination of proven design analysis tools with broad applicability throughout the SoC flow. The SpyGlass platform includes a tool suite for linting, CDC verification, DFT, constraints analysis, routing congestion analysis and power management applicable at RTL as well as the gate level. Providing visibility to design risks early and at high design abstractions, SpyGlass enables Early Design Closure® –During the course of chip development, design goals evolve and get refined from the initial RTL development phase to the final SoC implementation phase. The SpyGlass platform offers a consistent solution that can be used effectively at each stage of the design process to achieve the respective design goals. The use of the right SpyGlass tools at the right stage of design development helps design teams achieve a predictable repeatable methodology.

The list of design goals addressed by GuideWare, a set of pre-packaged methodologies for SpyGlass, show that the risk of failure is early addressed, and can be minimized:

  • Will the design simulate correctly?
  • Are clocks and resets defined correctly?
  • Will the design synthesize correctly? Are there unintended latches or combo loops?
  • Will gate simulations match RTL simulations?
  • What will the test coverage be?
  • What is the power consumption of a given block?
  • What is the profile of this IP? (For example, gates, flops, latches, RAMS/ROMS, I/Os, tristates, clocks)
  • Are there any inherent risks or non-standard design practices used in this IP?
  • Are there any adaptation issues in the target SoC, such as power, routability or congestion?
  • Are all the incoming blocks truly ready for integration? Are they clean in terms of clocks/resets and constraints?
  • What are possible inter-block issues? (For example, are block-level constraints complete and coherent with target SoC constraints?)
  • What are “common-plane” issues among heterogeneous blocks? (For example, scan chain management and test blockages at the SoC level)
  • Can I leverage my block-level work (waivers, constraints) at the SoC level?

Coming back to TSMC soft IP quality assessment program, we can see that the list of IP partners is a who’s who including from Network-on-Chip IP vendor Arteris, DSP IP core supplier CEVA, PCI Express IP core (PLDA), configurable CPU IP core (Tensilica) to GPU and CPU IP core vendors with ARM Ltd. and Imagination Technologies, Video and Display IP (Chips and Media), and scanning also Dolphin Integration, Cosmic Circuits or GlobalUniChip, provider of mixed-signal IP. That’s really make sense that ARM, the #1 IP vendor, join this program, as well as it would really makes sense that at least two of the top 3 EDA & IP vendor, Cadence and Synopsys, would join the program, sooner or later…

Eric Esteve from IPNEST

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16nm FinFET versus 20nm Planar!

16nm FinFET versus 20nm Planar!
by Daniel Nenni on 11-04-2012 at 8:10 pm
Categories: FinFET, Foundries, TSMC

The common theme amongst semiconductor ecosystem conferences this year is FinFETS, probably the most exciting technology we will see this decade. A lot has been written on SemiWiki about FinFETS, it is one of the top trending search terms, but there is some confusion about the process naming so let me attempt to explain.

In planar process technologies the 28nm or 20nm implies the minimum transistor gate length of 28nm or 20nm. Corresponding to that lithographic capability are two other critical dimensions: the “contacted gate pitch” and the “metal pitch” for the lowest, thinnest metal layers. (Higher metal layers will be thicker with less resistance which are more suitable for longer routes but will have a greater width+space design pitch.)

Given that, the 16nm FinFET process technology is a bit of a misnomer. It was probably named by Marketing people to imply that the resulting performance when transitioning from planar to FinFET in a 20nm lithography process would be “between 20nm planar and 14nm FinFET”.

Why 16nm FinFETS you ask? Two reasons: (1) EUV is late so a true 14nm FinFET process will not be possible by 2015 and (2) Customers designing mobile devices were not willing to wait for the power savings FinFETS have to offer. As a result, the current 20nm lithography process was modified for FinFETs, and the 16nm FinFET process was born.

If you were to ask, “What is the minimum gate length, contacted gate pitch and metal pitch for 16nm FF, and how does that differ from 20nm SoC?”, you would get the answer that it’s the same litho design rules, just a different transistor structure.

There is one additional measurement that is introduced in a FinFET technology: the effective device width per micron. These are transistor parameters, and they are an indicator of performance, but they are relatively independent of the contacted gate pitch + metal pitch, which define the achievable circuit density.

The IBM 14nm FinFET tape out briefing provided some interesting process details. Disclosing this type of information is certainly not IBM-like so the stakes are obviously high in the race to FinFETs:

[TABLE] align=”left” style=”width: 470px”
|-
|
| 32nm
| 28nm
| 20nm
| 14nm
|-
| Architecture
| Planar
| Planar
| Planar
| FinFET
|-
| Contacted poly pitch
| 126nm
| 114nm
| 90nm
| 80nm
|-
| Metal pitch
| 100nm
| 90nm
| 64nm
| 64nm
|-
| Local interconnect
| No
| No
| Yes
| Yes
|-
| Self-aligned contact
| No
| No
| No
| No
|-
| Strain engineering
| Yes
| Yes
| Yes
| Yes
|-
| Double patterning
| No
| No
| Yes
| Yes
|-

Bottom line, lithographically, both 16nm and 14nm FinFET processes are still effectively offering a 20nm technology with double-patterning of lower-level metals and no triple or quad patterning.

One team has chosen to define the performance of their FinFET as a “half node” improvement (e.g., 20nm ->16nm), whereas the other has chosen to represent the performance of their FinFET as equivalent to a “full-node shrink” (20nm -> 14nm). There will be slightly different fin_height, fin_thickness, and fin_pitch parameters between the two processes but the circuit density is really still the same as 20nm.

Some designs might be smaller but in general I think FinFets at 16nm and 14nm will offer significantly lower power consumption and leakage but only marginally better performance and area than 20nm planar, just my opinion of course.

Who do you think will be first to get FinFETS into volume production? Would it be TSMC, Samsung, or GF? Check out the SemiWiki FinFET poll HERE. Anybody can vote so please do.

Also see:

GLOBALFOUNDRIES 14nm FAQ

FinFET Wiki

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Chip On Wafer On Substrate (CoWoS)

Chip On Wafer On Substrate (CoWoS)
by Daniel Payne on 11-03-2012 at 5:19 pm
Categories: EDA, Foundries, Siemens EDA, TSMC

tsmc cowos test vehicle1

Our EDA industry loves three letter acronyms so credit the same industry for creating a five letter acronym CoWoS. Two weeks ago TSMC announced tape-out of their first CoWoS test chip integrating with JEDEC Wide I/O mobile DRAM interface, making me interested enough to read more about it. At the recent TSMC Open Innovation Platform there was a presentation from John Park, Methodology Architect at Mentor Graphics called –A Platform for the CoWoS Reference Flow. Continue reading “Chip On Wafer On Substrate (CoWoS)”

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SpyGlass IP Kit 2.0

SpyGlass IP Kit 2.0
by Paul McLellan on 11-01-2012 at 6:00 pm
Categories: EDA, Foundries, TSMC

On Halloween, Atrenta and TSMC announced the availability of SpyGlass IP Kit 2.0. IP Kit is a fundamental element of TSMC’s soft IP9000 Quality Assessment program that assesses the robustness and completeness of soft (synthesizable) IP.

IP Kit 2.0 will be fully supported on TSMC-Online and available to all TSMC’s soft IP alliance partners on Nov. 20, 2012, just in time to make sure your turkey is SpyGlass Clean.

TSMC’s soft IP quality assessment program is a joint effort between TSMC and Atrenta to deploy a series of SpyGlass checks that create detailed reports of the completeness and robustness of soft IP. Currently, over 15 soft IP suppliers have been qualified through the program. IP Kit 2.0 represents an enhanced set of checks that adds physical implementation data (e.g., area, timing and congestion) and advanced formal lint checks (e.g., X-assignment, dead code detection). IP Kit 2.0 also allows easier integration into the end user’s design flow and enhanced IP packaging options.

On the same subject, IPExtreme had an all day meeting at the computer history museum about, duh, IP. One of the companies presenting was Atrenta and here is a video of Michael Johnson’s presentation on IP Kit.

And, completely off topic, at the end of the IPExreme event they served wine and beer and had a short presentation on each beforehand. Jessamine McLellan, then the sommelier at Chez TJ in Mountain View (now the bar manager at the not-yet-open Hakkasan in San Francisco) gave a presentation on pairing wine with food. That last name sounds a little familiar…

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TSMC OIP Forum 2012 Trip Report!

TSMC OIP Forum 2012 Trip Report!
by Daniel Nenni on 10-21-2012 at 6:00 pm
Categories: EDA, Foundries, TSMC

The second annual TSMC Open Integration Platform Ecosystem Forum was last week and let me tell you it was excellent. Great update on the TSMC process technology road maps, great for networking within the fabless semiconductor ecosystem, great for seeing what’s new in EDA and IP, and great for SemiWiki. It was time well spent for sure. You can see my TSMC OIP 2011 trip report HERE for reference.


The opening video was excellent this year! It was all about collaboration of course and an orchestra is a perfect example. My wife played first chair violin so this theme really clicked with me. Last year’s theme was a rowing team which did not click with me. You can see the symphony videoHERE.

First up was Rick Cassidy. Rick is President of TSMC North America. Prior to joining TSMC in 1997 Rick was Vice President and General Manager of National Semiconductor’s Military and Aerospace Division. He joined National in 1979. Before that, Rick was an officer in the U.S. Army. He earned his Bachelor of Science degree from the United States Military Academy at West Point.

According to Rick attendance was up from last year which I certainly agree with. I counted 1008 seats in the main auditorium and estimate that 95% of them were taken. This does not include the partners manning the booths in the exhibition room next door.

Rick presented the TSMC vision and mentioned some interesting numbers:

*TSMC has more than 5,000 silicon validated IP available today, WOW! I have been through the TSMC silicon validation process many times and let me tell you it is rigorous to say the least.

*TSMC has invested $1.5B in design enablement thus far in 2012!

*TSMC in 1987 had one fab, a $20M CAPEX, 30 products and shipped 3,600 wafers

*TSMC in 2012 has 11 fabs, 5,498 different technologies, 12,569 products, $50B CAPEX, 615 customers, and a 15.3M wafer capacity!

Rick mentioned that his decision to join the semiconductor industry was based on the opportunity to change the world. I wish I could say the same. 30 years ago I was a starving college student and my decision was financial. I knew there was big money to be made in Silicon Valley and I wanted some. Looking back however we did change the world and there is still plenty of money to be made in doing so.

Next up was Dr. Mark Liu. Mark is TSMC’s Executive Vice President and Co-Chief Operating Officer. He joined TSMC in 1993 as an Engineering Manager. Prior to that Mark served in a number of technical capacities first with AT&T Bell Laboratories as a principal investigator in High Speed Electronics Research and later at Intel Corporation where he developed process technologies for Intel’s 32-bit microprocessors and flash memory products. Mark is a member of the Board of Directors of Silicon System Manufacturing Company in Singapore. He received Ph.D. degrees in electrical engineering and computer science from the University of California, Berkeley.

I met Mark when I toured Fab 12 in 2010, I blogged about it HERE. A memorable experience for sure. Mark ramped up TSMC’s first 200mm fab in 1993 and has been building fabs for TSMC ever since. Mark talked about “The Internet of Things” and what 2030 will look like. Mark also stated that:

*The TSMC 20nm design ecosystem (EDA and IP) are available today

*20nm is close to complete and will be in production next year

*TSMC will have three fabs for 20nm.

Next up was Dr. Cliff Hou, Cliff is vice president of R&D. Cliff’s door and mind is always open for new technology discussions and debates on the future of the semiconductor ecosystem. Cliff joined TSMC in 1997 and was appointed TSMC’s Vice President of Research and Development (R&D) in 2011. He was previously Senior Director of Design and Technology Platform where he established the company’s technology design kit and reference flow development organizations. He also led TSMC’s in-house IP development teams from 2008 to 2010. Cliff holds 20 U.S. patents and serves as a board member of Global Unichip Corp. He received his Ph.D. in electrical and computer engineering from Syracuse University.

Cliff added that:

*20nm engagements with partners and customers started much earlier

*TSMC overcame 20nm challenges through collaboration

*16nm FinFET will require even deeper collaboration

Cliff also mentioned that at 40nm partners and customers started design work when the PDK was release 0.5, at 28nm design work started at PDK 0.1, at 20nm design work started at PDK .05, and 16nm will start at PDK .01. The 20nm PDK 1.0 and 20nm foundation IP is silicon validated and available today with customer tape-outs expected in Q1 2013. 16nm PDK .1 will be available in Q1 2013 with the production version PDK 1.0 scheduled in Q4 2013.

The most interesting thing for me was the FinFET discussions and there were plenty of them which I will blog about separately. For those of you who don’t know about FinFETS start here with the FinFET Wiki. 2013 will be the year of the FinFET, absolutely!

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TSMC dilemma: Cadence, Mentor or Synopsys?

TSMC dilemma: Cadence, Mentor or Synopsys?
by Eric Esteve on 10-18-2012 at 4:49 am
Categories: Cadence, EDA, Foundries, Siemens EDA, Synopsys, TSMC

Looking at the Press Release (PR) flow, it was interesting to see how TSMC has solved a communication dilemma. At first, let’s precise that #1 Silicon foundry has to work with each of the big three EDA companies. As a foundry, you don’t want to lose any customer, and then you support every major design flow. Choosing another strategy would be stupid.

The first PR came on October 12, about Chip on Wafer on Substrate tape out, here is an extract: “TSMC today announced that it has taped out the foundry segment’s first CoWoS™ (Chip on Wafer on Substrate) test vehicle using JEDEC Solid State Technology Association’s Wide I/O mobile DRAM interface… A key to this success is TSMC’s close relationship with its ecosystem partners to provide the right features and speed time-to-market. Partners include: Wide I/O DRAM from SK Hynix; Wide I/O mobile DRAM IP from Cadence Design Systems; and EDA tools from Cadence and Mentor Graphics.”

As you can see, both design tools from Cadence and Mentor are mentioned, and Cadence can be honored: the test vehicle is based on Wide I/O mobile DRAM IP from the company. We will have a look at Wide I/O more in depth soon in this blog.

Cadence and Mentor? Look like one is missing!

Then, today, the industry was awarded that Synopsys has “received TSMC’s 2012 Interface IP Partner of the Year Award for the third consecutive year. Synopsys was selected based on customer feedback, TSMC-9000 compliance, technical support excellence and number of customer tape-outs. Synopsys’ DesignWare Interface IP portfolio includes widely used protocols such as USB, PCI Express, DDR, MIPI, HDMI and SATA that are offered in a broad range of processes from 180 nanometer (nm) to 28nm.”

If you want to know more about the Interface IP market, weighting over $300 million in 2011, you should take a look at this post

The PR about the Chip on Wafer on Substrate (CoWoS) from TSMC shows that Cadence invests to develop the memory controller technology of the near future, to be used for 3D-IC on mobile applications. I suggest you to read this excellent article from Paul McLelan, so you will understand how work CoWoS from a Silicon technology standpoint.

I will rather focus on the Wide I/O Memory Controller. Here is the description of the key features, as described by Cadence:
Key Features

  • Supports Wide I/O DRAM memories compliant with JESD229
  • Supports typical 512-bit data interface from SoC to DRAM (4 x 128 bit channels) over TSV at 200MHz offering more than 100Gbit/sec of peak DRAM bandwidth
  • Independent controllers for each channel allow optimization of traffic and power on a per-channel basis
  • Supports 3D-IC chip stacking using direct chip-to-chip contact
  • Supports 2.5D chip stacking using silicon interposer to connect SoC to DRAM
  • Priority and quality-of-service (QoS) features
  • Flexible paging policy including autoprecharge-per-command
  • Two-stage reordering queue to optimize bandwidth and latency
  • Coherent bufferable write completion
  • Power-down and self-refresh
  • Advanced low-power module can reduce standby power by 10x
  • Supports single- and multi-port host busses (up to 32 busses with a mix of bus types)
  • Priority-per-command (AXI4 QoS)
  • BIST algorithm in hardware enables high-speed memory testing and has specific tests for Wide I/O devices

It’s amazing! During the last ten years, we have seen a massive move from parallel to serial interface, think about PCI moving to PCI Express, PATA being completely replaced by SATA in storage application in less than 5 years, and the list is long. With the Wide I/O concept, we can see that a massively (512-bit) parallel interface, running at 200 MHz (to be compared with LPDDR3 at 800 MHz DDR), can offer both a better bandwidth up to 17 GB/s, and a better power per transfer performance than LPDDRn solution.

Anything magic here? The higher performance in term of bandwidth can be easily explained: adding enough 64-bit wide busses will allow passing LPDDR3 performance. But the reason why the power per transfer is better is more subtle: because it’s a 3D technology, the connection between the SoC and the DRAM will be made in the 3[SUP]rd[/SUP] (vertical) dimension, as shown in the picture from Qualcomm : thus, the connection length will be shorter than any connection made on a board. Moreover, the capacitance (due to the bumping or bonding material and to the track on the PCB) will be minimized with 3D connection. Then the power per bit transferred at a certain frequency. I did not checked how this was computed, but I am not shocked by this result…

So, Wide I/O memory controller looks like a superb new technology developed by Cadence, the mobile market is healthy enough (an understatement!) to decide to introduce the technology, but, as mentioned by Qualcomm on the above picture “Qualcomm want this but also competitive pricing”…

Eric Esteve from IPNEST

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Soft IP Quality Standards

Soft IP Quality Standards
by Paul McLellan on 10-09-2012 at 1:08 pm
Categories: EDA, Foundries, TSMC

As SoC design has transformed from being about writing RTL and more towards IP assembly, the issue of IP quality has become increasingly important. In 2011 TSMC and Atrenta launched the soft IP qualification program. Since then, 13 partners have joined the program.

IP quality is multi-faceted but at the most basic level, an IP block needs to do two things: it needs to meet its specification (for example, adhering to the protocol standard for a network interface) and it needs to be easy to implement into the design. Ideally, the IP itself does not need to be changed at all, this would be an indication of lack of IP quality and immediately increases the verification cost.

October 16th is the TSMC Open Innovation Platform Ecosystem Forum at the San Jose convention center. Anuj Kumar of Atrenta will discuss the TSMC IP Kit, which is a joint development between TSMC and Atrenta using the SpyGlass platform for IP handoff analysis and validation. The presentation will be at 11am. In particular he will discuss the new version of the IP Kit, TSMC IP Kit 2.0, currently under joint development between Atrenta and TSMC. This version of the kit adds physical analysis of the IP (such as routing congestion) as well as advanced formal metrics the explore the ease of verification of the IP.

Anuj will review the tests that are part of the Kit, show example quality metrics and DataSheet reports, and discuss the kind of design issues that have been uncovered and fixed as a result of the program. He will present the timeline for implementation of IP Kit 2.0 and the results of the testing of IP Kit V2.0 with IP partners.

Information about the TSMC OIP Ecosystem Forum is here. Information about IP Kit is here. As well as Anuj presenting, Atrenta will also be exhibiting at booth #405.

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TSMC OIP Ecosystem Forum 2012

TSMC OIP Ecosystem Forum 2012
by Daniel Nenni on 10-07-2012 at 7:11 pm
Categories: Arm, Foundries, IP, TSMC
2 Comments

The TSMC Open Innovation Platform® (OIP) Ecosystem Forum brings TSMC’s design ecosystem member companies together to share with our customers real-case solutions for customers’ design challenges and success stories of best practice in TSMC’s design ecosystem.


More than 90% of the attendees last year said “this forum helped them better understand the components of TSMC’s Open Innovation Platform” and “they found it effective to hear directly from TSMC OIP member companies.”

Please introduce yourself if you see me. It would be a pleasure to meet you!

REGISTRATION

This year, the forum will feature a day-long conference starting with executive keynotes from TSMC and ARMin the morning plenary session to outline future design challenges and roadmaps, as well as discuss a recent collaboration announcement, 30 selected technical papersfrom TSMC’s EDA, IP, Design Center Alliance and Value Chain Aggregator member companies, and an Ecosystem Pavilion featuring up to 80 member companies showcasing their products and services.

Agenda

San Jose Convention Center,
Tuesday , October 16th, 2012

[TABLE] cellpadding=”4″ style=”width: 97%”
|-
| colspan=”4″ align=”center” | Plenary Session
|-
| style=”width: 15%” | 08:00
| colspan=”3″ | Registration Opens
|-
| 09:00 – 09:10
| colspan=”2″ | Welcome Remarks
| style=”width: 29%” | TSMC NA Executive
|-
| 09:10 – 09:40
| colspan=”2″ | An Ecosystem for Innovation
| TSMC Executive
|-
| 09:40 – 10:10
| colspan=”2″ | TSMC Design Technology Update
| TSMC Executive
|-
| 10:10 – 10:40
| colspan=”2″ | ARM Feature Talk
| Inviting Executive Level Speaker
|-
| 10:40 – 11:00
| colspan=”3″ align=”center” | Coffee Break
|-

[TABLE] cellpadding=”4″ style=”width: 97%”
|-
| align=”center” style=”width: 15%” | [TABLE] cellpadding=”10″ style=”width: 100%”
|-
| align=”center” |
|-

| align=”center” width=”27%” | EDA Track
| align=”center” width=”29%” | IP Track
| align=”center” width=”29%” | EDA/IP/Services Track
|-
| 11:00 – 11:30
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | A Platform for the CoWoS Reference Flow
|-
| align=”center” valign=”top” | Mentor Graphics
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | TSMC IP Kit V2.0 – Enhancing Soft IP Quality Standards
|-
| align=”center” valign=”top” | Atrenta
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | SiP, 3D-IC & IPD Complement Flexible ASICs
|-
| align=”center” valign=”top” | GUC
|-

|-
| 11:30 – 12:00
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | How to Manage Variability and Double
Patterning at 20nm
|-
| align=”center” valign=”top” | Cadence
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | 1T-OTP – Non-Volatile Memory for
Mobile and Other Low-Power Applications
|-
| align=”center” valign=”top” | Sidense
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Timing Sign-off and Technology Migration Using Functionalized Timing Reports
|-
| align=”center” valign=”top” | IMEC
|-

|-
| 12:00 – 12:30
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Finding and Fixing Double Patterning Errors in 20nm Design
|-
| align=”center” valign=”top” | Mentor Graphics &
TSMC
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Implementing and Optimising Graphics IP in SoCs
|-
| align=”center” valign=”top” | Imagination Technologies
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Truly Differentiated Memory Subsystems on TSMC’s Advanced Technology Nodes
|-
| align=”center” valign=”top” | eSilicon
|-

|-
| 12:30 – 13:30
| colspan=”3″ align=”center” valign=”top” | Lunch
|-
| 13:30 – 14:00
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Enabling 20nm Custom Design in Laker
|-
| align=”center” valign=”top” | Springsoft
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Advanced Silicon Design Methodology For Achieving 20nm Ready, Physical IP
|-
| align=”center” valign=”top” | Synopsys
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Publishing Innovation through IP Targeting TSMC Technology
|-
| align=”center” valign=”top” | Design & Reuse
|-

|-
| 14:00 – 14:30
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | 3D-IC Silicon Interposer IC Design Flow Using Cadence Encounter Digital Implementation (EDI) System
|-
| align=”center” valign=”top” | Cadence
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Comprehensive Embedded NVM Solution in Trusted Technology and Capacity Platform
|-
| align=”center” valign=”top” | eMemory
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | TMI: A Unified Compact Model Development Platform for 28nm & Beyond
|-
| align=”center” valign=”top” | Synopsys &
TSMC
|-

|-
| 14:30 – 15:00
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Verification of Power, Signal, and Reliability Integrity for 3D-IC/Silicon Interposer Designs
|-
| align=”center” valign=”top” | ANSYS / Apache
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Novel Low-Power Audio CODEC from 180nm to 28nm with Moore and More!
|-
| align=”center” valign=”top” | Dolphin Integration
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Design Methodology for Silicon-Accurate Jitter Analysis for 28nm Interface IP for 100GB Applications
|-
| align=”center” valign=”top” | Berkeley Design Automation &
Analog Bits
|-

|-
| 15:00 – 15:30
| colspan=”3″ align=”center” | Coffee Break
|-
| 15:30 – 16:00
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | TSMC Certification for Cadence 20nm RTL-to-GDSII Flow
|-
| align=”center” valign=”top” | Cadence
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Solving ESD, EOS and Latch-Up Requirements
– For Analog Interfaces in Advanced CMOS
– For Automotive Applications in TSMC’s BCD Platforms
|-
| align=”center” valign=”top” | SOFICS
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Comprehensive Simulation and Modeling Solutions for TSMC’s RF Platforms
|-
| align=”center” valign=”top” | Agilent / EEsof
|-

|-
| 16:00 – 16:30
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Double-Patterning Technology and Impact on 20nm Designs
|-
| align=”center” valign=”top” | Synopsys
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Enabling Design with Advanced Node Design IP for TSMC
|-
| align=”center” valign=”top” | Cadence
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Silicon-Accurate Mixed-Signal Fractional-N PLL IP Design
|-
| align=”center” valign=”top” | Berkeley Design Automation &
Silicon Creations
|-

|-
| 16:30 – 17:00
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Improved Design for Reliability Using Calibre PERC
|-
| align=”center” valign=”top” | Mentor Graphics
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Kilopass Roadmap for Advanced TSMC Processes
|-
| align=”center” valign=”top” | Kilopass
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Chip-Partitioning Trends in Systems Using Ultra Deep-Submicron SoCs
|-
| align=”center” valign=”top” | Cosmic Circuits
|-

|-
| 17:00 – 17:30
| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Automated Approach for Waiving Physical Verification Errors at IP
|-
| align=”center” valign=”top” | Mentor Graphics &
LSI
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | Using Latest-Generation DDR4, LPDDR3 and
Wide-IO DRAM Devices with Chips in TSMC’s
Advanced 28nm and 20nm Processes
|-
| align=”center” valign=”top” | Cadence
|-

| align=”center” valign=”top” | [TABLE] cellspacing=”3″ style=”width: 100%”
|-
| align=”center” valign=”top” | CMOS Silicon Millimeterwave Design Closure on
Integrated Fullwave Electromagtic Simulation and
Extraction Platform with a Real Silicon Design Case
|-
| align=”center” valign=”top” | Lorentz &
Stanford University
|-

|-
| 17:30 – 18:00
| colspan=”3″ align=”center” | Networking and Reception
|-

Legal Notice:TSMC is not responsible for the content, accuracy, or reliability of any of the presentations at the TSMC Open Innovation Platform Ecosystem Forum. Furthermore, posting the presentation abstracts on TSMC’s corporate website does not constitute an endorsement of the content of those presentations by TSMC. Any liability arising from the contents of any of the presentations is the responsibility of the presenter itself, and not TSMC.

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Exclusive Sneak Peek: Cadence at TSMC OIP Ecosystem Forum 2012

Exclusive Sneak Peek: Cadence at TSMC OIP Ecosystem Forum 2012
by Daniel Nenni on 10-05-2012 at 8:37 am
Categories: Cadence, EDA, Foundries, TSMC

The TSMC Open Innovation Platform® (OIP) Ecosystem Forum brings TSMC’s design ecosystem member companies together to share with our customers real-case solutions for customers’ design challenges and success stories of best practice in TSMC’s design ecosystem. More than 90% of the attendees last year said “this forum helped them better understand the components of TSMC’s Open Innovation Platform” and “they found it effective to hear directly from TSMC OIP member companies.”

Cadence and TSMC have a long history of collaborating to deliver solutions that ensure our joint customers’ success. Along with design ecosystem partners such as ARM, Cadence and TSMC team up on TSMC’s Open Innovation Platform to optimize design and manufacturing efficiencies to ensure your design’s success.

While at TSMC OIP 2012, be sure to schedule your time to catch all the activities and sessions that Cadence is hosting. Here is your schedule for all things Cadence at OIP.

At 12:30, enjoy lunch courtesy of Cadence, your official lunch sponsor for TSMC OIP 2012.

After the morning keynotes, Cadence will deliver detailed technical sessions in both the IP and EDA tracks.

  • 11:30 AM: How to Manage Variability and Double Patterning at 20nm (EDA track)
  • 2:00 PM: 3D-IC Silicon Interposer IC Design Flow Using Cadence Encounter Digital Implementation (EDI) System (EDA track)
  • 3:30 PM: TSMC Certification for Cadence 20nm RTL-to-GDSII Flow (EDA track)
  • 4:00 PM: Enabling Design with Advanced Node Design IP for TSMC (IP track)
  • 5:00 PM: Using Latest-Generation DDR4, LPDDR3 and Wide-IO DRAM Devices with Chips in TSMC’s Advanced 28nm and 20nm (IP track)

Cadence demonstrations will be available throughout the day. Visit Cadence in Booth 414 to see demonstrations of how Cadence and TSMC collaborate to help you optimize PPA. Demonstrations include:

  • 3D-IC Design Infrastructure Enablement Supporting CoWoS
  • Virtuoso 20nm Certified Technologies
  • 20nm Certified High Performance Technologies
  • Custom Design Qualified Reference Flow
  • Certified Signoff Technologies for Advanced Nodes
  • Design IP for DDR4 and 28nm

Win a Kindle Fire Visit two demo stations in Cadence booth 414 and have your entry form from your registration bag stamped at each demo station. Drop off your completed entry form at Cadence booth 414 before 6:00PM. The winner will be drawn before the end of the networking reception.