Wiki Tag: Intel 18A
Rapidus 2nm Process Technology Wiki
Rapidus 2nm is Japan’s flagship next-generation logic process node, under development by Rapidus Corporation in collaboration with IBM and imec, targeting high-performance, energy-efficient, leading-edge semiconductor manufacturing. The goal is to achieve mass production readiness by 2027, marking Japan’s re-entry… Read More
Intel 18A(P) Process Technology Wiki
Intel 18A(P) (also referred to as Intel 18A+ or simply 18A Performance) is Intel’s upcoming advanced semiconductor process node, positioned as a refinement and performance enhancement of the base Intel 18A node. It marks a critical step in Intel’s roadmap to reclaim process leadership by the latter half of the 2020s, leveraging… Read More
Intel 3 vs. Intel 18A Wiki
Overview
| Feature | Intel 3 | Intel 18A |
|---|---|---|
| Node Class | Enhanced 7nm (refinement of Intel 4) | 1.8nm-class full-node leap |
| Transistor Type | FinFET | RibbonFET (GAAFET) |
| Power Delivery | Front-side power only | Backside Power Delivery (PowerVia) |
| EUV Use | Partial (select layers) | Extensive EUV, reduced multi-patterning |
| PPA Target | Modest vs. Intel |
TSMC A14 Process Technology Wiki
Also known as: TSMC 1.4nm, A14 process node
Node class: Advanced logic technology (1.4nm)
Foundry: Taiwan Semiconductor Manufacturing Company (TSMC)
Expected HVM (High Volume Manufacturing): 2028
Predecessor: TSMC N2 (2nm)
Transistor architecture: 2nd Generation GAAFET (nanosheet)
Backside power variant: A14P (planned… Read More
GAAFET (Gate-All-Around FET) Wiki
Full Name: Gate-All-Around Field-Effect Transistor
Also Known As: Gate-All-Around FET, Nanosheet FET, Nanowire FET
Category: Advanced 3D CMOS Transistor
Predecessor: FinFET (Tri-Gate Transistor)
Successors/Subtypes: Nanosheet FET, MBCFET (Samsung), RibbonFET (Intel), Forksheet FET
First Commercial Use: Samsung… Read More
Samsung 2nm Process Technology Wiki
Node Name: Samsung 2nm
Internal Name: SF2 (Samsung Foundry 2nm)
Technology Type: Gate-All-Around (GAA) – MBCFET™
Developer: Samsung Electronics (Samsung Foundry Division)
Announced: May 2022
Targeted Risk Production: 2025
Targeted High Volume Manufacturing (HVM): 2026
Successor to: Samsung 3GAP (3nm Gate-All-Around… Read More
Intel 18A Process Technology Wiki
Node Name: Intel 18A
Process Class: ~1.8nm (Angstrom-class node)
Announced: July 2021
First Production Tapeout: Late 2024 (risk production)
High-Volume Manufacturing: Expected in 2025
Transistor Type: RibbonFET (Gate-All-Around)
Power Delivery: PowerVia (Backside Power Delivery Network)
Foundry Availability: Yes… Read More
TSMC N2 vs Intel 18A vs Samsung SF2 Wiki
| Category | TSMC N2 | Intel 18A | Samsung 2nm (SF2) |
|---|---|---|---|
| Target Mass Production | 2H 2025 (risk production late 2024) | H2 2024 (internal); early 2025 for IFS customers | Late 2025 – risk production |
| Transistor Type | GAA nanosheet (TSMC’s implementation) | RibbonFET (Intel’s GAA design) | MBCFET™ (Multi-Bridge Channel FET) |
| Backside Power |
Basilisk at Hot Chips 2025 Presented Ominous Challenge to IP/EDA Status Quo