Samsung 3nm Process Technology Wiki

Samsung 3nm Process Technology Wiki
by Daniel Nenni on 07-13-2025 at 3:13 pm

Official Names:

  • Samsung 3GAE (3nm Gate-All-Around Early)

  • Samsung 3GAP (3nm Gate-All-Around Plus)
    Technology Type: Gate-All-Around (GAA) FET – MBCFET™
    Developer: Samsung Electronics (Samsung Foundry)
    Announced: 2021 (3GAE), 2022 (3GAP)
    Mass Production Start:

  • 3GAE: June 2022

  • 3GAP: Expected 2024–2025
    Predecessor: 4nm

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Intel 3 Process Technology Wiki

Intel 3 Process Technology Wiki
by Daniel Nenni on 07-13-2025 at 2:08 pm

Node Name: Intel 3
Process Class: 3nm (Intel naming)
Technology Type: FinFET (last FinFET node before transition to GAA)
Announced: July 2021 (as part of Intel’s process roadmap)
Production Start: Late 2023 (initial ramp), volume production in 2024
Primary Use Cases: Data center, high-performance computing (HPC), networking,… Read More