TSMC 32Mb Embedded STT-MRAM at ISSCC2020

TSMC 32Mb Embedded STT-MRAM at ISSCC2020
by Don Draper on 03-20-2020 at 6:00 am

Fig. 1. Cross section of the STT MRAM bit cell in BEOL metallization layers between M1 and M5.

32Mb Embedded STT-MRAM in ULL 22nm CMOS Achieves 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150C and High Immunity to Magnetic Field Interference presented at ISSCC2020

1.  Motivation for STT-MRAM in Ultra-Low-Leakage 22nm Process

TSMC’s embedded Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)… Read More


TSMC Talks About 22nm, 12nm, and 7nm EUV!

TSMC Talks About 22nm, 12nm, and 7nm EUV!
by Daniel Nenni on 03-16-2017 at 12:00 pm

The TSMC Symposium was jam-packed this year with both people and information. I had another 60 minutes of fame in the Solido booth where I signed 100 books, thank you to all who stopped by for a free book and a SemiWiki pen. SemiWiki bloggers Tom Dillinger and Tom Simon were also there so look for more TSMC Symposium blogs coming in the… Read More