The Evolution of the Extension Implant Part V

The Evolution of the Extension Implant Part V
by Daniel Nenni on 05-13-2019 at 7:00 am

Part 4 of this series discussed how a transistor Extension could be fabricated in a planar device without using an implant operation, and is instead formed using a preferential etch followed by a selective epitaxial deposition. This final installment of the series will present the formation of an Extension in a FinFET transistor… Read More


The Evolution of the Extension Implant Part IV

The Evolution of the Extension Implant Part IV
by Daniel Nenni on 05-10-2019 at 2:00 pm

Perhaps the most innovative and effective Extension implant does not involve an implant at all, but is instead an etch followed by a selective epitaxial deposition.

In this Extension fabrication methodology the Source/Drains regions in a planar device are etched away in the normal fashion to accommodate the replacement Source/Drain… Read More