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Key takeaways
- IMPATT (Impact Ionization Avalanche Transit Time) sources operating at millimeter-wave and sub-THz frequencies using GaN technology have the potential to become some of the most powerful high-frequency (RF) generators.
- At this year’s IEDM, a major breakthrough was reported: a GaN IMPATT RF oscillator achieving
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Prof. Thomas Lee from Stanford University is the keynote speaker at the upcoming 38th EOS/ESD Symposium (September 11-16, Anaheim). The EOS/ESD Symposium is focused on discussing the issues and providing the answers to electrostatic discharge in electronic production and assembly.
Abstract:
Steel transformed civilization… Read More
