Self-Aligned Via Process Development for Beyond the 3nm Node

Self-Aligned Via Process Development for Beyond the 3nm Node
by Tom Dillinger on 01-05-2022 at 6:00 am

TEM DoD

The further scaling of interconnect and via lithography for advanced nodes is challenged by the requirement to provide a process window that supports post-patterning critical dimension variations and mask overlay tolerances.  At the recent international Electron Devices Meeting (IEDM) in San Francisco, TSMC presented … Read More


The Latest in Dielectrics for Advanced Process Nodes

The Latest in Dielectrics for Advanced Process Nodes
by Tom Dillinger on 01-12-2021 at 6:00 am

new ILDs v2

Of the three types of materials used in microelectronics – i.e., semiconductors, metals, and dielectrics – the first two often get the most attention.  Yet, there is a pressing need for a rich variety of dielectric materials in device fabrication and interconnect isolation to satisfy the performance, power, and reliability … Read More


SEMICON West – Applied Materials Selective Gap Fill Announcement

SEMICON West – Applied Materials Selective Gap Fill Announcement
by Scotten Jones on 08-17-2020 at 5:00 pm

Applied Materials Selective Gapfill July 2020 Page 02

At SEMICON West, Applied Materials announced a new selective gap fill tool to address the growing resistance issues in interconnect at small dimensions. I had the opportunity to discuss this new tool and the applications for it with Zhebo Chen global product manager in the Metal Deposition Products group at Applied Materials.… Read More