The further scaling of interconnect and via lithography for advanced nodes is challenged by the requirement to provide a process window that supports post-patterning critical dimension variations and mask overlay tolerances. At the recent international Electron Devices Meeting (IEDM) in San Francisco, TSMC presented … Read More
Tag: metal overlap via
GLOBALFOUNDRIES and Mentor Develop Methods to Identify Critical Features in IC Designs
Since the beginning of the semiconductor industry, improving the rate of yield learning has been a critical factor in the success silicon manufacturing. Each fab has dedicated yield teams that look at the yield of wafers manufactured the previous day and attempt to find the root cause of any unexpected “excursions.” In earlier… Read More