ANSYS Enters the League of 10nm Designs with TSMC

ANSYS Enters the League of 10nm Designs with TSMC
by Pawan Fangaria on 04-09-2015 at 7:00 pm

The way we are seeing technology progression these days is unprecedented. It’s just about six months ago, I had written about the intense collaboration between ANSYSand TSMCon the 16nm FinFET based design flow and TSMC certifying ANSYS tools for TSMC 16nm FF+ technology and also conferring ANSYS with “Partner of the Year” award.… Read More


Silicon Measurement Data Gives Insights to Using Metal Fill With Inductors

Silicon Measurement Data Gives Insights to Using Metal Fill With Inductors
by Tom Simon on 08-27-2014 at 4:00 pm

Metal fill requirements for inductors are now a fact of life. Fill has long been seen as detrimental to device performance due to parasitic capacitance. The necessity of fill arises from the need to ensure planarization of dielectric layers by using chemical mechanical polishing. Without adequate fill, areas of the chip can suffer… Read More


FinFET & Multi-patterning Need Special P&R Handling

FinFET & Multi-patterning Need Special P&R Handling
by Pawan Fangaria on 04-28-2014 at 1:00 pm

I think by now a lot has been said about the necessity of multi-patterning at advanced technology nodes with extremely low feature size such as 20nm, because lithography using 193nm wavelength of light makes printing and manufacturing of semiconductor design very difficult. The multi-patterning is a novel semiconductor manufacturing… Read More