SPIE 2017 ASML and Cadence EUV impact on place and route

SPIE 2017 ASML and Cadence EUV impact on place and route
by Scotten Jones on 04-13-2017 at 7:00 am

As feature sizes have shrunk, the semiconductor industry has moved from simple, single-exposure lithography solutions to increasingly complex resolution-enhancement techniques and multi-patterning. Where the design on a mask once matched the image that would be produced on the wafer, today the mask and resulting image … Read More


In-Design DFM Signoff for 14nm FinFET Designs

In-Design DFM Signoff for 14nm FinFET Designs
by Pawan Fangaria on 11-04-2014 at 4:00 pm

While FinFET yield controversy is going on, I see a lot being done to improve that yield by various means. One prime trend today, it must be, it’s worthwhile, is to pull up various signoffs as early as possible during the design cycle. And DFM signoff is a must with respect to yield of fabrication. This reminds me about my patents filed… Read More