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The topics of stochastics and blur in EUV lithography has been examined by myself for quite some time now [1,2], but I am happy to see that others are pursuing this direction seriously as well [3]. As advanced node half-pitch dimensions approach 10 nm and smaller, the size of molecules in the resist becomes impossible to ignore for… Read More
To the general public, EUV lithography’s resolution can be traced back to its short wavelengths (13.2-13.8 nm), but the true printed resolution has always been affected by the stochastic behavior of the electrons released by EUV absorption [1-5].
A 0.33 NA EUV system is expected to have a diffraction-limited point spread… Read More
