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The current leading edge of advanced lithography nodes (e.g., “7nm” or “1Z nm”) features pitches (center-center distances between lines) in the range of 30-40 nm. Whether EUV (13.5 nm wavelength) or ArF (193 nm wavelength) lithography is used, one thing for certain is that the minimum imaged pitch … Read More
The annual SPIE Advanced Lithography Conference kicked off last night with vendor sponsored networking events and such. SPIE is the international society for optics and photonics but this year SPIE Advanced Lithography is all about the highly anticipated EUV technology. Scotten Jones and I are at SPIE so expect more detailed… Read More
