Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation
by Fred Chen on 03-02-2023 at 10:00 am

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

The many idiosyncrasies of EUV lithography affect the resolution that can actually be realized. One which still does not get as much attention as it should is the cross-slit pupil rotation [1-3]. This is a fundamental consequence of using rotational symmetry in ring-field optical systems to control aberrations in reflective… Read More


EUV’s Pupil Fill and Resist Limitations at 3nm

EUV’s Pupil Fill and Resist Limitations at 3nm
by Fred Chen on 08-08-2022 at 10:00 am

EUV Pupil Fill and Resist Limitations at 3nm p1

The 3nm node is projected to feature around a 22 nm metal pitch [1,2]. This poses some new challenges for the use of EUV lithography. Some challenges are different for the 0.33NA vs. 0.55NA systems.

0.33 NA

For 0.33 NA systems, 22 nm pitch can only be supported by illumination filling 4% of the pupil, well below the 20% lower limit for

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