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TechInsights has completed an exploratory teardown and process analysis of the Huawei Kirin 9030 application processor used in the new Mate 80 Pro Max. Our structural and dimensional analysis confirms that the chip is manufactured using SMIC’s N+3 process, a scaled evolution of its 7nm-class technology, and a key indicator of how close SMIC is to achieving a true 5nm-equivalent node without EUV lithography.
Our Kirin 9030 analysis confirms SMIC’s N+3 node and reveals how it compares to industry 5nm. Get process measurements, density benchmarks, and expert analysis.
While SMIC’s N+3 process shows meaningful density improvements, our comparative measurements confirm it remains significantly less scaled than leading commercial 5nm nodes offered by TSMC and Samsung. Full competitive metrics—including gate density comparisons
While SMIC’s N+3 process shows meaningful density improvements, our comparative measurements confirm it remains significantly less scaled than leading commercial 5nm nodes offered by TSMC and Samsung. Full competitive metrics—including gate density comparisons
My objection to TechInsights' or Jukan's spin is that the difference between TSMC's and Samsung's 5nm densities is more than the difference (or ratio) between Samsung and SMIC.
AFAIK Samsung's 5nm node is half node of their 7nm EUV process, and TSMC's is full node from their N7. So if SMIC's density is similar to Samsung's then it's more like 7nm-equivalent process.
Yeah, I remembered the gate pitch had been "abnormally" large, but actually it's just that SMIC density < Samsung density < TSMC density for a given process family or cluster.
Overview TSMC N5 (5-nanometer process node) is a high-volume FinFET-based semiconductor manufacturing technology developed by Taiwan Semiconductor Manufacturing Company (TSMC). It succeeded the N7 (7nm) family and introduced substantial improvements in performance, power, and transistor density...
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