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Hi Fred - Just would like to clarify what I presented at DAC. Samsung Foundry's 7nm plans continues to be with EUV. We view EUV as an important factor to lower overall cost, as well as shortening the wafer processing time (vs immersion). More over, we expect by having EUV implemented for select layers, the lesser mask count will result in better yields as compared to high mask count immersion path. The article that you reference to have mis-quoted me. thanks.
Hi Kelvin, thanks for replying with explanation. The excerpt did not disagree your key target of 7nm EUV with mask reduction but mentioned an immersion 7nm for a brief period before it. Is that correct? Is there a sort of transition node inserted? Thanks for your clarification!
hi Fred - our POR 7nm plan is with EUV. We have a very compelling 10LPP offering prior to 7nm with EUV. If you are interested, we can discuss further offline. Thanks - Kelvin.
